ADUC834 Analog Devices, ADUC834 Datasheet - Page 8

• Manufacturer Part Number: ADUC834
• Description: Precision Analog Microcontroller: 1MIPS 8052 MCU + 62kB Flash + 16/24-Bit ADC + 12-Bit DAC
• Manufacturer: Analog Devices

Specifications of ADUC834

• Mcu Core: 8052
• Mcu Speed (mips): 1
• Sram (bytes): 2304Bytes
• Gpio Pins: 34
• Adc # Channels: 4
• Other: PWM

ADuC834
NOTES
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Specifications subject to change without notice.
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Temperature Range for ADuC834BS (MQFP package) is –40°C to +125°C.
Temperature Range for ADuC834BCP (CSP package) is –40°C to +85°C.
These numbers are not production tested but are guaranteed by design and/or characterization data on production release.
System Zero-Scale Calibration can remove this error.
The primary ADC is factory calibrated at 25°C with AV
significantly different from these, an Internal Full-Scale Calibration will restore this error to 10 V. A system zero-scale and full-scale calibration will remove this
error altogether.
Gain Error Drift is a span drift. To calculate Full-Scale Error Drift, add the Offset Error Drift to the Gain Error Drift times the full-scale input.
The auxiliary ADC is factory calibrated at 25°C with AV
will remove this error altogether.
DAC linearity and ac specifications are calculated using: reduced code range of 48 to 4095, 0 to V
Gain Error is a measure of the span error of the DAC.
In general terms, the bipolar input voltage range to the primary ADC is given by RangeADC = ± (V
V
and RN2, RN1, RN0 = 1, 1, 0 the Range
1.25 V is used as the reference voltage to the ADC when internal V
In bipolar mode, the Auxiliary ADC can only be driven to a minimum of AGND – 30 mV as indicated by the Auxiliary ADC absolute AIN voltage limits. The
bipolar range is still –V
The ADuC834BCP (CSP Package) has been qualified and tested with the base of the CSP Package floating.
Pins configured in SPI Mode, pins configured as digital inputs during this test.
Pins configured in I
Flash/EE Memory Reliability Characteristics apply to both the Flash/EE program memory and Flash/EE data memory.
Endurance is qualified to 100 Kcycles as per JEDEC Std. 22 method A117 and measured at –40 °C, +25°C, +85°C, and +125°C. Typical endurance at 25°C
is 700 Kcycles.
Retention lifetime equivalent at junction temperature (T
will derate with junction temperature as shown in Figure 16 in the Flash/EE Memory section of this data sheet.
Power Supply current consumption is measured in Normal, Idle, and Power-Down modes under the following conditions:
Normal mode: Reset = 0.4 V, Digital I/O pins = open circuit, Core Clk changed via CD bits in PLLCON, Core Executing internal software loop.
Idle mode: Reset = 0.4 V, Digital I/O pins = open circuit, Core Clk changed via CD bits in PLLCON, PCON.0 = 1, Core Execution suspended in idle mode.
Power-Down mode: Reset = 0.4 V, All P0 pins and P1.2–P1.7 Pins = 0.4 V, All other digital I/O pins are open circuit, Core Clk changed via CD bits in
PLLCON, PCON.1 = 1, Core Execution suspended in power-down mode, OSC turned ON or OFF via OSC_PD bit (PLLCON.7) in PLLCON SFR.
DV
REF
DD
= REFIN(+) to REFIN(–) voltage and V
power supply current will increase typically by 3 mA (3 V operation) and 10 mA (5 V operation) during a Flash/EE memory program or erase cycle.
2
C Mode only.
REF
to +V
REF
; however, the negative voltage is limited to –30 mV.
ADC
= ± 1.28 V. In unipolar mode, the effective range is 0 V to 1.28 V in our example.
REF
= 1.25 V when internal ADC V
DD
J
DD
) = 55°C as per JEDEC Std. 22, Method A117. Retention lifetime based on an activation energy of 0.6eV
= DV
= DV
DD
DD
REF
= 5 V yielding this full-scale error of 10 V. If user power supply or temperature conditions are
= 5 V yielding this full-scale error of –2.5 LSB. A system zero-scale and full-scale calibration
is selected via XREF0 and XREF1 bits in ADC0CON and ADC1CON, respectively.
–8–
REF
is selected. RN = decimal equivalent of RN2, RN1, RN0, e.g., V
REF
REF
; reduced code range of 100 to 3950, 0 to V
2
RN
)/125, where:
DD
.
REF
= 2.5 V
REV. A