NX3008CBKV NXP Semiconductors, NX3008CBKV Datasheet

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology

NX3008CBKV

Manufacturer Part Number
NX3008CBKV
Description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Manufacturer
NXP Semiconductors
Datasheet
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra
small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
Table 1.
[1]
Symbol
TR2 (P-channel)
V
V
TR1 (N-channel)
V
V
TR1 (N-channel), Static characteristics
R
TR2 (P-channel), Static characteristics
R
I
I
D
D
DS
GS
DS
GS
DSon
DSon
NX3008CBKV
30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET
Rev. 1 — 29 July 2011
Low threshold voltage
Very fast switching
Trench MOSFET technology
Level shifter
Power supply converter
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
drain-source voltage
gate-source voltage
drain current
drain-source on-state
resistance
drain-source on-state
resistance
Conditions
T
V
T
V
V
T
V
T
j
j
j
j
GS
GS
GS
GS
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= -4.5 V; T
= 4.5 V; T
= 4.5 V; I
= -4.5 V; I
D
D
amb
amb
= 350 mA;
= -200 mA;
= 25 °C
= 25 °C
ESD protection up to 2 kV
AEC-Q101 qualified
Load switch
Switching circuits
[1]
[1]
Min
-
-8
-
-
-8
-
-
-
Product data sheet
Typ
-
-
-
-
-
-
1
2.8
Max
-30
8
-220
30
8
400
1.4
4.1
2
.
Unit
V
V
mA
V
V
mA

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NX3008CBKV Summary of contents

Page 1

... NX3008CBKV 400 / 220 mA N/P-channel Trench MOSFET Rev. 1 — 29 July 2011 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  ...

Page 2

... Simplified outline SOT666 (SOT666) Description plastic surface-mounted package; 6 leads Marking code AC All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 NX3008CBKV Graphic symbol Version SOT666 [1] © NXP B.V. 2011. All rights reserved. G2 017aaa262 ...

Page 3

... °C amb ° °C amb °C amb °C amb HBM HBM All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 NX3008CBKV Min Max - - [1] - -220 [1] - -140 ≤ 10 µs - -0.9 p [2] - 330 [1] ...

Page 4

... V, 400 / 220 mA N/P-channel Trench MOSFET 001aao121 75 125 175 T (°C) j Fig drain mounting pad All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 NX3008CBKV 120 I der (%) -75 - Normalized continuous drain current as a function of junction temperature ...

Page 5

... Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm NX3008CBKV Product data sheet 400 / 220 mA N/P-channel Trench MOSFET -1 2 drain mounting pad All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 NX3008CBKV 001aao254 (1) (2) (3) (4) (5) 2 -10 ...

Page 6

... TR1: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values NX3008CBKV Product data sheet 400 / 220 mA N/P-channel Trench MOSFET − − All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 NX3008CBKV 017aaa064 (s) p 017aaa065 ...

Page 7

... TR2, Transient thermal impedance from junction to ambient as a function of pulse duration; typical values NX3008CBKV Product data sheet 400 / 220 mA N/P-channel Trench MOSFET − − All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 NX3008CBKV 017aaa064 (s) p 017aaa065 ...

Page 8

... mA ° 350 mA ° 400 mA 4 °C j All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 NX3008CBKV Min Typ Max Unit - -0.6 -0.9 -1 µ -10 µA - -0.2 -1 µ ...

Page 9

... Ω °C G(ext -200 mA ° 350 mA ° All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 NX3008CBKV Min Typ Max Unit - 6 2 ...

Page 10

... Fig 10. TR1: Sub-threshold drain current as a function 001aao269 R (on) DS (Ω) (3) (4) (5) (6) 0.3 0.4 I (A) D Fig 12. TR1: Drain-source on-state resistance as a All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 NX3008CBKV -3 (1) (2) ( 0.0 0.5 1 ° (1) minimum values ...

Page 11

... V (V) GS Fig 14. TR1: Normalized drain-source on-state 001aao273 (pF) 120 180 T (˚C) j Fig 16. TR1: Input, output and reverse transfer All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 NX3008CBKV 2.0 a 1.5 1.0 0.5 0.0 - resistance as a function of junction temperature; typical values 2 10 (1) ...

Page 12

... Q (nC °C amb Fig 18. Gate charge waveform definitions 001aao276 (2) 0.6 1.2 V (V) SD Fig 20. TR2: Output characteristics: drain current as a All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 NX3008CBKV GS(pl) V GS(th GS1 GS2 ...

Page 13

... V (V) GS Fig 22. TR2: Drain-source on-state resistance as a 001aao259 (1) ( (A) GS Fig 24. TR2: Transfer characteristics: drain current as All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 NX3008CBKV 14 (on) (Ω) 12 (1) (2) ( -0.05 -0.10 -0. °C ...

Page 14

... Fig 26. TR2: Gate-source threshold voltage as a 001aao263 V GS (V) (1) (2) (3) 2 -10 -10 V (V) DS Fig 28. Gate-source voltage as a function of gate All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 NX3008CBKV (1) (2) (3) 0.0 - 120 I = -0.25 mA (1) maximum values (2) typical values ...

Page 15

... V, 400 / 220 mA N/P-channel Trench MOSFET -0.25 (A) -0.20 -0.15 -0.10 -0. 003aaa508 Fig 30. TR2: Source current as a function of P duty cycle δ All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 NX3008CBKV I S (1) 0.00 0.0 -0 150 ° °C j source-drain voltage; typical values t ...

Page 16

... 1.3 1.7 0.3 1.0 0.5 1.1 1.5 0.1 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 NX3008CBKV detail 0.1 0.1 EUROPEAN PROJECTION © NXP B.V. 2011. All rights reserved. SOT666 ISSUE DATE 04-11-08 06-03- ...

Page 17

... All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 NX3008CBKV solder lands 0.3 0.25 placement area (2×) (2×) solder paste occupied area 0.375 Dimensions in mm (4×) (4×) sot666_fr © NXP B.V. 2011. All rights reserved. ...

Page 18

... NXP Semiconductors 11. Revision history Table 8. Revision history Document ID Release date NX3008CBKV v.1 20110729 NX3008CBKV Product data sheet 400 / 220 mA N/P-channel Trench MOSFET Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 ...

Page 19

... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 NX3008CBKV © NXP B.V. 2011. All rights reserved ...

Page 20

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 NX3008CBKV © NXP B.V. 2011. All rights reserved ...

Page 21

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 29 July 2011 Document identifier: NX3008CBKV ...

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