NX3008CBKV NXP Semiconductors, NX3008CBKV Datasheet - Page 8

• Manufacturer Part Number: NX3008CBKV
• Description: Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Characteristics
Table 7.
NX3008CBKV
Product data sheet
Symbol
TR2 (P-channel), Static characteristics
V
V
I
I
R
g
TR1 (N-channel), Static characteristics
V
V
I
I
R
g
TR1 (N-channel), Dynamic characteristics
Q
Q
Q
DSS
GSS
DSS
GSS
fs
fs
(BR)DSS
GSth
(BR)DSS
GSth
DSon
DSon
G(tot)
GS
GD
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
transfer conductance
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
transfer conductance
total gate charge
gate-source charge
gate-drain charge
Conditions
I
I
V
V
V
V
V
V
V
V
V
V
V
V
I
I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
T
All information provided in this document is subject to legal disclaimers.
D
D
D
D
j
DS
DS
GS
GS
GS
GS
GS
GS
GS
GS
GS
DS
DS
DS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
DS
DS
= 25 °C
= -250 µA; V
= -250 µA; V
= 250 µA; V
= 250 µA; V
= -30 V; V
= -30 V; V
= -10 V; I
= 30 V; V
= 30 V; V
= 10 V; I
= 15 V; I
= 8 V; V
= -8 V; V
= 4.5 V; V
= -4.5 V; V
= 2.5 V; V
= -2.5 V; V
= -4.5 V; I
= -2.5 V; I
= -4.5 V; I
= 8 V; V
= -8 V; V
= 4.5 V; V
= -4.5 V; V
= 2.5 V; V
= -2.5 V; V
= 4.5 V; I
= 4.5 V; I
= 2.5 V; I
= 1.8 V; I
Rev. 1 — 29 July 2011
DS
DS
D
D
DS
DS
D
D
D
D
D
GS
GS
D
D
D
GS
DS
GS
GS
DS
DS
DS
DS
= 350 mA; T
= 400 mA; V
GS
DS
DS
DS
DS
DS
= -200 mA; T
= 350 mA; T
= 350 mA; T
= 200 mA; T
= 10 mA; T
= 0 V; T
= 0 V; T
= -200 mA; T
= -10 mA; T
= -200 mA; T
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= V
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= V
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET
GS
GS
; T
j
j
; T
j
j
= 25 °C
= 25 °C
j
j
= 25 °C
= 25 °C
j
j
j
j
j
j
j
= 25 °C
= 150 °C
j
j
j
j
j
j
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 150 °C
j
j
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
j
GS
= 25 °C
= 25 °C
j
j
j
j
= 25 °C
j
= 25 °C
= 150 °C
= 150 °C
= 25 °C
j
j
= 25 °C
= 25 °C
= 150 °C
= 4.5 V;
Min
-30
-0.6
-
-
-
-
-
-
-
-
-
-
-
-
30
0.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
NX3008CBKV
Typ
-
-0.9
-
-
-0.2
-0.2
-10
-10
-1
-1
2.8
5.3
5.3
160
-
0.9
-
-
0.2
0.2
10
10
1
1
1
1.8
1.4
2
310
0.52
0.17
0.08
© NXP B.V. 2011. All rights reserved.
-
Max
-
-1.1
-1
-10
-1
-1
-
-
-
-
4.1
6.5
7.8
-
-
1.1
1
10
1
1
-
-
-
-
1.4
2.5
2.1
2.8
-
0.68
-
Unit
V
V
µA
µA
µA
µA
nA
nA
nA
nA
Ω
Ω
Ω
mS
V
V
µA
µA
µA
µA
nA
nA
nA
nA
Ω
Ω
Ω
Ω
mS
nC
nC
nC
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