NX3008CBKV NXP Semiconductors, NX3008CBKV Datasheet - Page 5

• Manufacturer Part Number: NX3008CBKV
• Description: Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Thermal characteristics
Table 6.
[1]
[2]
NX3008CBKV
Product data sheet
Symbol
Per device
R
TR1 (N-channel)
R
R
TR2 (P-channel)
R
R
Fig 4.
th(j-a)
th(j-a)
th(j-sp)
th(j-a)
th(j-sp)
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm
function of drain-source voltage
I
(1) t
(2) t
(3) DC; T
(4) t
(5) DC; T
Safe operating area TR2 (P-channel); junction to ambient; continuous and peak drain currents as a
DM
Thermal characteristics
is a single pulse
p
p
p
= 1 ms
= 10 ms
= 100 ms
Parameter
thermal resistance from junction to ambient
thermal resistance from junction to ambient
thermal resistance from junction to solder point
thermal resistance from junction to ambient
thermal resistance from junction to solder point
sp
amb
(A)
-10
-10
l
D
= 25 °C
-10
= 25 °C; 1 cm
-1
-1
-2
-10
-1
2
drain mounting pad
All information provided in this document is subject to legal disclaimers.
-1
Rev. 1 — 29 July 2011
30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET
Conditions
in free air
in free air
in free air
-10
V
DS
(1)
(2)
(3)
(4)
(5)
(V)
[1]
[1]
[2]
[1]
[2]
001aao254
2
.
NX3008CBKV
Min
-
-
-
-
-
-
-
-10
2
Typ
-
330
280
-
330
280
-
© NXP B.V. 2011. All rights reserved.
Max
250
380
320
115
380
320
115
Unit
K/W
K/W
K/W
K/W
K/W
K/W
K/W
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