NX3008CBKV NXP Semiconductors, NX3008CBKV Datasheet - Page 14

• Manufacturer Part Number: NX3008CBKV
• Description: Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
NX3008CBKV
Product data sheet
Fig 25. TR2: Normalized drain-source on-state
Fig 27. TR2: Input, output and reverse transfer
(pF)
C
a
10
2.0
1.5
1.0
0.5
0.0
10
1
-10
2
-60
resistance as a function of junction
temperature; typical values
capacitances as a function of drain-source
voltage; typical values
f = 1 MHz; V
(1)C
(2)C
(3)C
-1
iss
oss
rss
0
GS
-1
= 0 V
60
-10
(1)
(2)
(3)
120
V
All information provided in this document is subject to legal disclaimers.
DS
001aao261
T
001aao263
j
(V)
(˚C)
-10
180
Rev. 1 — 29 July 2011
2
30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET
Fig 26. TR2: Gate-source threshold voltage as a
Fig 28. Gate-source voltage as a function of gate
V
GS(th)
V
(V)
(V)
GS
-1.5
-1.0
-0.5
0.0
-5
-4
-3
-2
-1
0
-60
0.0
function of junction temperature
charge; typical values
I
(1) maximum values
(2) typical values
(3) minimum values
I
D
D
= -0.25 mA; V
= -200 mA; V
0.1
0
0.2
DS
DS
0.3
(1)
(2)
(3)
= -15 V; T
= V
NX3008CBKV
60
0.4
GS
0.5
amb
120
© NXP B.V. 2011. All rights reserved.
= 25 °C
001aao262
T
001aao264
0.6
j
Q
(˚C)
G
(nC)
180
0.7
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