NX3008CBKV NXP Semiconductors, NX3008CBKV Datasheet - Page 12

• Manufacturer Part Number: NX3008CBKV
• Description: Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
NX3008CBKV
Product data sheet
Fig 17. TR1: Gate-source voltage as a function of gate
Fig 19. TR1: Source current as a function of
V
(V)
(A)
I
GS
S
0.4
0.3
0.2
0.1
0.0
5
4
3
2
1
0
0.0
0.0
charge; typical values
source-drain voltage; typical values
I
V
(1) T
(2) T
D
GS
= 0.4 A; V
= 0 V
j
j
= 150 °C
= 25 °C
DS
0.2
0.4
= 15 V; T
(1)
amb
0.4
0.6
= 25 °C
(2)
Q
V
All information provided in this document is subject to legal disclaimers.
G
SD
001aao275
001aao276
(nC)
(V)
0.6
1.2
Rev. 1 — 29 July 2011
30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET
Fig 18. Gate charge waveform definitions
Fig 20. TR2: Output characteristics: drain current as a
(A)
-0.25
-0.20
-0.15
-0.10
-0.05
I
D
0.00
function of drain-source voltage; typical values
T
0
V
j
V
V
V
-4.5 V
GS(pl)
= 25 °C
DS
GS(th)
GS
Q
-1
GS1
-3 V
I
Q
D
GS
Q
GS2
NX3008CBKV
-2
Q
G(tot)
Q
GD
V
GS
-3
-2.5 V
© NXP B.V. 2011. All rights reserved.
-2 V
= -1.5 V
V
003aaa508
001aao256
DS
(V)
-4
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