NX3008CBKV NXP Semiconductors, NX3008CBKV Datasheet - Page 13

• Manufacturer Part Number: NX3008CBKV
• Description: Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
NX3008CBKV
Product data sheet
Fig 21. TR2: Sub-threshold drain current as a function
Fig 23. TR2: Drain-source on-state resistance as a
R
DS
(Ω)
(A)
-10
I
-10
-10
-10
D
(on)
14
12
10
-3
-4
-5
-6
8
6
4
2
0
0.0
of gate-source voltage
function of gate-source voltage; typical values
T
(1) minimum values
(2) typical values
(3) maximum values
I
(1) T
(2) T
0
D
j
= 25 °C; V
= -200 mA
j
j
= 150 °C
= 25 °C
-1
-0.5
DS
= -5 V
-2
(1)
-3
(2)
-1.0
(3)
V
-4
All information provided in this document is subject to legal disclaimers.
GS
001aao257
001aao259
V
(1)
(2)
(V)
GS
(A)
-1.5
-5
Rev. 1 — 29 July 2011
30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET
Fig 22. TR2: Drain-source on-state resistance as a
Fig 24. TR2: Transfer characteristics: drain current as
R
DS
(Ω)
(A)
-0.25
-0.20
-0.15
-0.10
-0.05
I
D
0.00
(on)
14
12
10
8
6
4
2
0
function of drain current; typical values
a function of gate-source voltage; typical
values
T
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
V
(1) T
(2) T
0
0
j
DS
= 25 °C
> I
j
j
GS
GS
GS
GS
GS
GS
(1)
= 25 °C
= 150 °C
-0.05
D
= -1.75 V
= -2.0 V
= -2.25 V
= -2.5 V
= -3.0 V
= -4.5 V
x R
DSon
(2)
-1
-0.10
NX3008CBKV
(3)
-0.15
-2
(1)
-0.20
V
© NXP B.V. 2011. All rights reserved.
(4)
GS
001aao258
(5)
(6)
001aao260
I
(V)
D
(2)
(A)
-0.25
-3
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