PMDT290UCE NXP Semiconductors, PMDT290UCE Datasheet
PMDT290UCE
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PMDT290UCE Summary of contents
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... PMDT290UCE 800 / 550 mA N/P-channel Trench MOSFET Rev. 1 — 6 October 2011 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits ...
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... GS amb °C; single pulse; t amb °C amb ° °C amb HBM All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 October 2011 PMDT290UCE Graphic symbol Version SOT666 Min Max - [1] - 800 ...
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... °C amb ° °C amb HBM °C amb 017aaa123 75 125 175 T (°C) j Fig 2. All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 October 2011 PMDT290UCE Min - -8 [ °C - [1] = 100 °C - ≤ 10 µ [ [1] - [3] - [2] - ...
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... PMDT290UCE Product data sheet 800 / 550 mA N/P-channel Trench MOSFET = V /I DSon DSon DS D –1 2 All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 October 2011 PMDT290UCE 017aaa361 (1) (2) (3) (4) ( (V) DS 017aaa373 (1) (2) (3) (4) (5) –10 V (V) DS © ...
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... TR1: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMDT290UCE Product data sheet 800 / 550 mA N/P-channel Trench MOSFET Conditions in free air in free air in free air − All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 October 2011 PMDT290UCE Min Typ Max [1] - 330 380 [2] - 280 320 - ...
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... TR2: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMDT290UCE Product data sheet 800 / 550 mA N/P-channel Trench MOSFET − − All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 October 2011 PMDT290UCE 017aaa065 (s) p 017aaa064 ...
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... mA ° 200 mA ° 500 mA 4 °C j All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 October 2011 PMDT290UCE 017aaa065 (s) p Min Typ Max 0.5 0.75 0. ...
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... - -4 Ω °C G(ext -300 mA ° All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 October 2011 PMDT290UCE Min Typ Max Unit - ...
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... V (V) DS Fig 10. TR1; Sub-threshold drain current as a function 017aaa353 (3) (4) (5) (6) 0.5 0.6 0.7 I (A) D Fig 12. TR1; Drain-source on-state resistance as a All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 October 2011 PMDT290UCE – (A) –4 10 (1) (2) –5 10 –6 10 0.00 0.25 0.50 0. °C; V ...
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... V (V) GS Fig 14. TR1; Normalized drain-source on-state 017aaa357 120 180 T (°C) j Fig 16. TR1; Input, output and reverse transfer All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 October 2011 PMDT290UCE 1.75 a 1.50 1.25 1.00 0.75 0.50 – resistance as a function of junction temperature; typical values (pF) ...
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... Q (nC °C amb Fig 18. Gate charge waveform definitions 017aaa360 (2) 0.6 0.8 1.0 V (V) SD Fig 20. TR2; Output characteristics: drain current as a All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 October 2011 PMDT290UCE GS(pl) V GS(th GS1 GS2 ...
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... V (V) GS Fig 22. TR2; Drain-source on-state resistance as a 017aaa366 (1) ( (V) GS Fig 24. TR2; Transfer characteristics: drain current as All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 October 2011 PMDT290UCE 4 DSon (1) (2) (Ω 0.0 -0.1 -0.2 -0 ° ...
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... Fig 26. TR2; Gate-source threshold voltage as a 017aaa370 V GS (V) 2 -10 -10 V (V) DS Fig 28. TR2; Gate-source voltage as a function of gate All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 October 2011 PMDT290UCE (1) (2) (3) 0.0 - 120 I = -0.25 mA (1) maximum values ...
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... PMDT290UCE Product data sheet 800 / 550 mA N/P-channel Trench MOSFET ( 017aaa137 Fig 30. TR2; Source current as a function of P duty cycle δ All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 October 2011 PMDT290UCE -0 -0.4 -0.3 -0.2 (1) -0.1 0.0 0.0 -0.2 -0 150 ° ...
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... 1.3 1.7 0.3 1.0 0.5 1.1 1.5 0.1 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 October 2011 PMDT290UCE detail 0.1 0.1 EUROPEAN PROJECTION © NXP B.V. 2011. All rights reserved. SOT666 ISSUE DATE 04-11-08 06-03- ...
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... All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 October 2011 PMDT290UCE solder lands 0.3 0.25 placement area (2×) (2×) solder paste occupied area 0.375 Dimensions in mm (4×) (4×) sot666_fr © NXP B.V. 2011. All rights reserved. ...
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... NXP Semiconductors 11. Revision history Table 8. Revision history Document ID Release date PMDT290UCE v.1 20111006 PMDT290UCE Product data sheet 800 / 550 mA N/P-channel Trench MOSFET Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 October 2011 ...
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... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 October 2011 PMDT290UCE © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 October 2011 PMDT290UCE © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 6 October 2011 Document identifier: PMDT290UCE ...