PMDT290UCE NXP Semiconductors, PMDT290UCE Datasheet - Page 8

• Manufacturer Part Number: PMDT290UCE
• Description: Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 7.
PMDT290UCE
Product data sheet
Symbol
C
C
C
t
t
t
t
TR1 (N-channel), Source-drain diode characteristics
V
TR2 (P-channel), Static characteristics
V
V
I
I
R
g
TR2 (P-channel), Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
TR2 (P-channel), Source-drain diode characteristics
V
d(on)
r
d(off)
f
DSS
GSS
d(on)
r
d(off)
f
fs
SD
(BR)DSS
GSth
SD
iss
oss
rss
DSon
iss
oss
rss
G(tot)
GS
GD
Characteristics
Parameter
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
transfer conductance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
…continued
Conditions
V
T
V
R
I
I
I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
T
V
R
I
All information provided in this document is subject to legal disclaimers.
S
D
D
S
j
j
DS
DS
DS
DS
GS
GS
GS
GS
GS
GS
GS
GS
DS
DS
GS
DS
DS
G(ext)
G(ext)
= 25 °C
= 300 mA; V
= 25 °C
= -300 mA; V
= -250 µA; V
= -250 µA; V
= 10 V; f = 1 MHz; V
= 10 V; R
= -20 V; V
= -20 V; V
= -10 V; I
= -10 V; I
= -10 V; f = 1 MHz; V
= -10 V; R
= 8 V; V
= -8 V; V
= 4.5 V; V
= -4.5 V; V
= -4.5 V; I
= -4.5 V; I
= -2.5 V; I
= -1.8 V; I
= -4.5 V; T
= 6 Ω; T
= 6 Ω; T
Rev. 1 — 6 October 2011
DS
DS
D
D
L
D
D
D
D
GS
GS
DS
L
GS
j
j
j
GS
DS
DS
= 250 Ω; V
= -200 mA; T
= -400 mA;
= 0 V; T
GS
= 25 °C
= 25 °C
= 25 °C
= -400 mA; T
= -400 mA; T
= -200 mA; T
= -10 mA; T
= 250 Ω; V
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= V
= 0 V; T
= 0 V; T
= 0 V; T
20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET
GS
j
; T
j
= 25 °C
GS
= 25 °C
j
j
j
GS
j
j
j
GS
= 25 °C
= 25 °C
= 150 °C
j
j
= 25 °C
GS
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 0 V;
j
j
= 0 V;
= 25 °C
= 4.5 V;
j
j
j
= 25 °C
= -4.5 V;
= 25 °C
= 150 °C
= 25 °C
PMDT290UCE
Min
-
-
-
-
-
-
-
0.48
-20
-0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-0.48
Typ
55
15
7
6
4
86
31
0.77
-
-0.8
-
-
-
-
-
-
0.67
1.1
1.2
1.8
610
0.76
0.28
0.18
58
21
12
18
30
80
72
-0.84
© NXP B.V. 2011. All rights reserved.
-
-
Max
83
-
-
12
-
172
-
1.2
-
-1.3
-1
-10
-2
-2
-0.5
-0.5
0.85
1.4
1.5
2.8
-
1.14
-
87
-
-
36
160
-
-1.2
Unit
pF
pF
pF
ns
ns
ns
ns
V
V
V
µA
µA
µA
µA
µA
µA
Ω
Ω
Ω
Ω
mS
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
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