PMDT290UCE NXP Semiconductors, PMDT290UCE Datasheet - Page 9

• Manufacturer Part Number: PMDT290UCE
• Description: Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMDT290UCE
Product data sheet
Fig 9.
Fig 11. TR1; Drain-source on-state resistance as a
R
DSon
(Ω)
(A)
I
D
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
2.0
1.5
1.0
0.5
0.0
0.0
function of drain-source voltage; typical values
function of drain current; typical values
T
TR1; Output characteristics: drain current as a
T
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
0
j
j
= 25 °C
= 25 °C
GS
GS
GS
GS
GS
GS
0.1
(1)
4.5 V
2.5 V
1.8 V
= 1.3 V
= 1.4 V
= 1.6 V
= 1.8 V
= 2.5 V
= 4.5 V
1
0.2
(2)
0.3
2
V
0.4
GS
1.4 V
1.2 V
1.0 V
= 1.6 V
0.5
3
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V
I
017aaa351
017aaa353
(4)
(5)
(6)
D
(3)
0.6
DS
(A)
(V)
0.7
Rev. 1 — 6 October 2011
4
20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET
Fig 10. TR1; Sub-threshold drain current as a function
Fig 12. TR1; Drain-source on-state resistance as a
R
DSon
(Ω)
(A)
I
10
10
10
10
D
2.0
1.5
1.0
0.5
0.0
–3
–4
–5
–6
0.00
of gate-source voltage
function of gate-source voltage; typical values
T
(1) minimum values
(2) typical values
(3) maximum values
I
(1) T
(2) T
0
D
j
= 25 °C; V
= 400 mA
j
j
= 150 °C
= 25 °C
0.25
1
DS
0.50
(1)
= 5 V
2
PMDT290UCE
(2)
0.75
3
(3)
1.00
© NXP B.V. 2011. All rights reserved.
4
017aaa352
017aaa354
V
V
(1)
(2)
GS
GS
(V)
(V)
1.25
5
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