PMDT290UCE NXP Semiconductors, PMDT290UCE Datasheet - Page 20

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology

PMDT290UCE

Manufacturer Part Number
PMDT290UCE
Description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PMDT290UCEH
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
8.1
9
10
11
12
12.1
12.2
12.3
12.4
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .7
Test information . . . . . . . . . . . . . . . . . . . . . . . . .14
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .15
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Revision history . . . . . . . . . . . . . . . . . . . . . . . . .17
Legal information. . . . . . . . . . . . . . . . . . . . . . . .18
Contact information. . . . . . . . . . . . . . . . . . . . . .19
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Quality information . . . . . . . . . . . . . . . . . . . . . .14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .18
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .19
20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PMDT290UCE
Document identifier: PMDT290UCE
Date of release: 6 October 2011
All rights reserved.

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