PMDT290UCE NXP Semiconductors, PMDT290UCE Datasheet - Page 7

• Manufacturer Part Number: PMDT290UCE
• Description: Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Characteristics
Table 7.
PMDT290UCE
Product data sheet
Symbol
TR1 (N-channel), Static characteristics
V
V
I
I
R
g
TR1 (N-channel), Dynamic characteristics
Q
Q
Q
DSS
GSS
Fig 8.
fs
(BR)DSS
GSth
DSon
G(tot)
GS
GD
Z
(K/W)
th(j-a)
10
10
10
1
3
2
10
FR4 PCB, mounting pad for drain 1 cm
TR2: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
−3
Characteristics
duty cycle = 1
0.25
0.5
0.1
0
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
transfer conductance
total gate charge
gate-source charge
gate-drain charge
0.75
0.33
0.05
0.2
0.02
0.01
10
−2
Conditions
I
I
V
V
V
V
V
V
V
V
V
V
V
V
T
All information provided in this document is subject to legal disclaimers.
D
D
10
j
DS
DS
GS
GS
GS
GS
GS
GS
GS
GS
DS
DS
= 25 °C
= 250 µA; V
= 250 µA; V
−1
= 20 V; V
= 20 V; V
= 10 V; I
= 10 V; I
= 8 V; V
= -8 V; V
= 4.5 V; V
= -4.5 V; V
= 4.5 V; I
= 4.5 V; I
= 2.5 V; I
= 1.8 V; I
2
Rev. 1 — 6 October 2011
DS
D
D
DS
D
D
D
D
GS
GS
GS
DS
DS
= 200 mA; T
= 500 mA; V
DS
= 500 mA; T
= 500 mA; T
= 200 mA; T
= 10 mA; T
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= V
= 0 V; T
= 0 V; T
= 0 V; T
1
20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET
GS
; T
j
j
= 25 °C
j
j
= 25 °C
j
j
= 25 °C
= 150 °C
j
j
= 25 °C
= 25 °C
j
= 25 °C
= 25 °C
j
GS
= 25 °C
j
j
j
= 25 °C
= 25 °C
= 150 °C
= 25 °C
= 4.5 V;
10
PMDT290UCE
Min
20
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
2
Typ
-
0.75
-
-
-
-
-
-
290
460
420
0.6
1.6
0.45
0.15
0.15
t
p
© NXP B.V. 2011. All rights reserved.
(s)
017aaa065
-
Max
-
0.95
1
10
2
2
500
500
380
610
620
1.1
-
0.68
-
10
3
Unit
V
V
µA
µA
µA
µA
nA
nA
mΩ
mΩ
mΩ
Ω
S
nC
nC
nC
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