PMDT290UCE NXP Semiconductors, PMDT290UCE Datasheet - Page 12

• Manufacturer Part Number: PMDT290UCE
• Description: Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMDT290UCE
Product data sheet
Fig 21. TR2; Sub-threshold drain current as a function
Fig 23. TR2; Drain-source on-state resistance as a
R
DSon
(Ω)
(A)
-10
I
-10
-10
-10
D
-3
-4
-5
-6
4
3
2
1
0
0.0
of gate-source voltage
function of gate-source voltage; typical values
T
(1) minimum values
(2) typical values
(3) maximum values
I
(1) T
(2) T
0
D
j
= 25 °C; V
= -400 mA
j
j
= 150 °C
= 25 °C
-1
-0.5
DS
(1)
= -5 V
-2
(2)
-3
-1.0
V
(1)
(2)
-4
All information provided in this document is subject to legal disclaimers.
GS
017aaa364
017aaa366
V
(3)
(V)
GS
(V)
-1.5
-5
Rev. 1 — 6 October 2011
20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET
Fig 22. TR2; Drain-source on-state resistance as a
Fig 24. TR2; Transfer characteristics: drain current as
R
DSon
(Ω)
(A)
I
D
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
4
3
2
1
0
0.0
0.0
function of drain current; typical values
a function of gate-source voltage; typical
values
T
(1) V
(2) V
(3) V
(4) V
(5) V
V
(1) T
(2) T
j
DS
= 25 °C
> I
j
j
GS
GS
GS
GS
GS
= 25 °C
= 150 °C
(1)
D
-0.1
= -1.5 V
= -1.8 V
= -2.0 V
= -2.5 V
= -4.5 V
× R
-0.5
DSon
-0.2
PMDT290UCE
-1.0
(2)
-0.3
(2)
-1.5
-0.4
© NXP B.V. 2011. All rights reserved.
(1)
V
017aaa365
017aaa367
GS
I
D
(3)
(4)
(5)
(V)
(A)
-0.5
-2.0
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