PMDT290UCE NXP Semiconductors, PMDT290UCE Datasheet - Page 5

• Manufacturer Part Number: PMDT290UCE
• Description: Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Thermal characteristics
Table 6.
[1]
[2]
PMDT290UCE
Product data sheet
Symbol
TR1 (N-channel)
R
R
TR2 (P-channel)
R
R
Per device
R
Fig 5.
th(j-a)
th(j-sp)
th(j-a)
th(j-sp)
th(j-a)
Z
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm
(K/W)
th(j-a)
10
10
10
1
3
2
10
FR4 PCB, standard footprint
TR1: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
−3
Thermal characteristics
duty cycle = 1
0.25
0.5
0.1
0
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
thermal resistance
from junction to
ambient
0.75
0.33
0.05
0.02
0.01
0.2
10
−2
Conditions
in free air
in free air
in free air
All information provided in this document is subject to legal disclaimers.
10
−1
Rev. 1 — 6 October 2011
1
20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET
10
[1]
[2]
[1]
[2]
[1]
2
PMDT290UCE
Min
-
-
-
-
-
-
-
.
10
2
Typ
330
280
-
330
280
-
-
t
p
© NXP B.V. 2011. All rights reserved.
(s)
017aaa064
Max
380
320
115
380
320
115
250
10
3
Unit
K/W
K/W
K/W
K/W
K/W
K/W
K/W
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