STM8S103F3 STMicroelectronics, STM8S103F3 Datasheet - Page 59

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STM8S103F3

Manufacturer Part Number
STM8S103F3
Description
Access line, 16 MHz STM8S 8-bit MCU, up to 8 Kbytes Flash, data EEPROM
Manufacturer
STMicroelectronics
Datasheet

Specifications of STM8S103F3

Program Memory
8 Kbytes Flash; data retention 20 years at 55 °C after 10 kcycles
Data Memory
640 bytes true data EEPROM; endurance 300 kcycles
Ram
1 Kbytes
Advanced Control Timer
16-bit, 4 CAPCOM channels, 3 complementary outputs, dead-time insertion and flexible synchronization

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STM8S103K3 STM8S103F3 STM8S103F2
10.3.2.6
10.3.2.7
Symbol
Symbol
(1)
(2)
(3)
(4)
(5)
(6)
I
t
(1)
(2)
DD(R)
RESETBL
t
WU(H)
Data guaranteed by design, not tested in production.
t
Measured from interrupt event to interrupt vector fetch.
Configured by the REGAH bit in the CLK_ICKR register.
Configured by the AHALT bit in the FLASH_CR1 register.
Plus 1 LSI clock depending on synchronization.
Data guaranteed by design, not tested in production.
Characterized with all I/Os tied to V
WU(WFI)
Parameter
Wakeup time active
halt mode to run
mode
Wakeup time active
halt mode to run
mode
Wakeup time from
halt mode to run
mode
= 2 x 1/f
Total current consumption and timing in forced reset state
Current consumption of on-chip peripherals
Subject to general operating conditions for V
Parameter
Supply current in reset
state
Reset pin release to
vector fetch
Table 30: Total current consumption and timing in forced reset state
(3)
(3)
(3)
(2)
master
+ 6 x 1/f
Conditions
CPU.
MVR voltage
regulator
off
MVR voltage
regulator
off
Flash in operating mode
Flash in power-down mode
(4)
(4)
SS
Conditions
V
V
.
DD
DD
DocID15441 Rev 7
= 5 V
= 3.3 V
Flash in operating
mode
Flash in
power-down
mode
(5)
(5)
DD
(5)
and T
(5)
A
.
HSI
(after
wakeup)
HSI
(after
wakeup)
Electrical characteristics
Typ
Typ
400
300
48
50
52
54
(6)
(6)
Max
Max
150
(1)
(1)
Unit
59/113
Unit
μA
μs

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