FDMS7608S Fairchild Semiconductor, FDMS7608S Datasheet
![no-image](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_sml.jpg)
FDMS7608S
Available stocks
Related parts for FDMS7608S
FDMS7608S Summary of contents
Page 1
... Thermal Resistance, Junction to Case θJC Package Marking and Ordering Information Device Marking Device FDMS7608S FDMS7608S ©2011 Fairchild Semiconductor Corporation FDMS7608S Rev.C ® MOSFET General Description This device includes two specialized N-Channel MOSFETs in a dual MLP package. The switch node has been internally = ...
Page 2
... Fall Time f Q Total Gate Charge g(TOT) Q Total Gate Charge g(TOT) Q Gate to Source Charge gs Q Gate to Drain “Miller” Charge gd ©2011 Fairchild Semiconductor Corporation FDMS7608S Rev 25°C unless otherwise noted J Test Conditions = 250 μ mA 250 μ ...
Page 3
... As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied based on starting Q2 based on starting ©2011 Fairchild Semiconductor Corporation FDMS7608S Rev 25°C unless otherwise noted J Test Conditions ...
Page 4
... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 1.5 2.0 2.5 3 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDMS7608S Rev 25°C unless otherwise noted 3 μ 1.5 2 ...
Page 5
... MAX RATED 125 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDMS7608S Rev 25°C unless otherwise noted J 2000 1000 100 ...
Page 6
... Typical Characteristics (Q1 N-Channel) 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 0.001 - Figure 13. ©2011 Fairchild Semiconductor Corporation FDMS7608S Rev 25°C unless otherwise noted J SINGLE PULSE 125 C/W θ JA (Note 1b RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve ...
Page 7
... DUTY CYCLE = 0.5% MAX 125 1.5 2.0 2 GATE TO SOURCE VOLTAGE (V) GS Figure 18. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDMS7608S Rev °C unless otherwise noted μ s 1.5 2.0 Figure 15. Normalized on-Resistance vs Drain 100 125 150 ...
Page 8
... MAX RATED 120 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 24. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDMS7608S Rev 25°C unless otherwise noted J 3000 1000 = 100 ...
Page 9
... Typical Characteristics (Q2 N-Channel) 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - Figure 26. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDMS7608S Rev °C unless otherwise noted J SINGLE PULSE 120 C/W θ JA (Note 1b RECTANGULAR PULSE DURATION (sec) ...
Page 10
... 23.06 23.08 23.10 23.12 23.14 23.16 23.18 23.20 23.22 23.24 TIME (ns) Figure 27. FDMS7608S SyncFET body diode reverse recovery characteristic ©2011 Fairchild Semiconductor Corporation FDMS7608S Rev.C (continued) Schottky barrier diodes exhibit significant leakage at high tem- perature and high reverse voltage. This will increase the power in the device ...
Page 11
... Dimensional Outline and Pad Layout PIN#1 QUADRANT MAX 0.10 C 0.08 C 0.05 0.00 1 PIN #1 IDENT 0.66 0.55 0.340 0. 1.27 0.46 0. 0.05 C ©2011 Fairchild Semiconductor Corporation FDMS7608S Rev TOP VIEW (5X (0.20 ) SIDE VIEW SEATING PL ANE 2.67 0. 3.85 0.48 3.75 ...
Page 12
... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2011 Fairchild Semiconductor Corporation FDMS7608S Rev.C Power-SPM™ ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ...