FDMS7608S Fairchild Semiconductor, FDMS7608S Datasheet - Page 8

• Manufacturer Part Number: FDMS7608S
• Description: This device includes two specialized N-Channel MOSFETs in a dual MLP package
• Manufacturer: Fairchild Semiconductor

FDMS7608S Rev.C
©2011 Fairchild Semiconductor Corporation
Typical Characteristics (Q2 N-Channel)
0.01
100
0.1
10
30
10
10
1
0.001
0.01
1
8
6
4
2
0
Figure 20. Gate Charge Characteristics
0
SINGLE PULSE
T
R
T
I
D
J
A
θ
THIS AREA IS
LIMITED BY r
Figure 22. Unclamped Inductive
JA
= MAX RATED
= 15 A
= 25
Figure 24. Forward Bias Safe
= 120
V
o
0.01
C
DS
0.1
Switching Capability
o
, DRAIN to SOURCE VOLTAGE (V)
t
C/W
AV
5
DS
Operating Area
, TIME IN AVALANCHE (ms)
Q
(
g
on
, GATE CHARGE (nC)
)
0.1
T
J
= 125
1
V
DD
10
= 10 V
o
V
C
DD
T
J
1
= 25
= 20 V
10
T
o
C
J
= 100
V
15
DD
10
10 ms
= 15 V
100
1 ms
100 ms
1s
DC
10s
o
C
μ
100200
s
100
20
8
T
J
= 25°C unless otherwise noted
3000
1000
100
1000
10
Figure 23. Maximum Continuous Drain
100
70
56
42
28
14
Figure 25. Single Pulse Maximum Power
0.5
10
0.1
0
10
1
25
f = 1 MHz
V
-4
GS
Limited by Package
Figure 21. Capacitance vs Drain
Current vs Case Temperature
R
= 0 V
θ
JC
10
V
= 3.2
-3
DS
50
, DRAIN TO SOURCE VOLTAGE (V)
to Source Voltage
T
o
C
10
t, PULSE WIDTH (sec)
C/W
,
CASE TEMPERATURE (
Dissipation
-2
1
75
10
-1
10
V
100
GS
0
= 4.5 V
SINGLE PULSE
R
10
θ
JA
o
C )
1
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= 120
V
10
125
GS
C
C
C
= 10 V
100
oss
rss
iss
o
C/W
30
1000
150