FDMS7608S Fairchild Semiconductor, FDMS7608S Datasheet - Page 5

• Manufacturer Part Number: FDMS7608S
• Description: This device includes two specialized N-Channel MOSFETs in a dual MLP package
• Manufacturer: Fairchild Semiconductor

FDMS7608S Rev.C
©2011 Fairchild Semiconductor Corporation
Typical Characteristics (Q1 N-Channel)
0.01
100
0.1
30
10
10
10
0.001
1
1
0.01
Figure 7.
8
6
4
2
0
0
SINGLE PULSE
T
R
T
I
J
A
D
Figure 9.
θ
JA
= MAX RATED
Figure 11. Forward Bias Safe
THIS AREA IS
LIMITED BY r
= 12 A
= 25
= 125
o
V
3
0.01
C
Switching Capability
DS
0.1
Gate Charge Characteristics
o
t
, DRAIN to SOURCE VOLTAGE (V)
AV
C/W
Operating Area
, TIME IN AVALANCHE (ms)
Unclamped Inductive
DS
Q
g
(
6
, GATE CHARGE (nC)
on
)
T
0.1
J
V
= 125
DD
1
= 10 V
9
o
C
T
J
V
= 25
DD
1
12
T
10
J
= 20 V
o
= 100
C
V
DD
o
100 ms
1s
15
C
100
1 ms
10 ms
10s
DC
= 15 V
10
μ
100200
s
50
18
T
J
5
= 25°C unless otherwise noted
1000
2000
1000
100
0.5
50
40
30
20
10
100
10
0
10
Figure 10.
1
10
25
0.1
-4
Figure 12.
Limited by Package
R
Figure 8.
f = 1 MHz
V
θ
Current vs Case Temperature
JC
GS
10
= 4.0
= 0 V
-3
50
V
DS
o
Maximum Continuous Drain
Power Dissipation
to Source Voltage
T
C/W
, DRAIN TO SOURCE VOLTAGE (V)
C
10
t, PULSE WIDTH (sec)
,
Single Pulse Maximum
Capacitance vs Drain
CASE TEMPERATURE (
-2
75
10
1
-1
V
1
100
GS
= 4.5 V
SINGLE PULSE
R
10
θ
o
JA
C )
V
125
= 125
GS
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10
100
= 10 V
C
C
C
o
rss
oss
iss
C/W
1000
150
30