FDMS7608S Fairchild Semiconductor, FDMS7608S Datasheet - Page 7
![no-image](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_sml.jpg)
FDMS7608S
Manufacturer Part Number
FDMS7608S
Description
This device includes two specialized N-Channel MOSFETs in a dual MLP package
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDMS7608S.pdf
(12 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDMS7608S
Manufacturer:
RENESAS
Quantity:
3 200
Part Number:
FDMS7608S
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDMS7608S Rev.C
©2011 Fairchild Semiconductor Corporation
Typical Characteristics (Q2 N-Channel)
60
50
40
30
20
10
60
50
40
30
20
10
0
1.6
1.4
1.2
1.0
0.8
0.6
0.0
0
Figure 14. On-Region Characteristics
Figure 16. Normalized On-Resistance
1.5
-75
Figure 18. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
DS
I
V
-50
D
GS
= 5 V
= 15 A
vs Junction Temperature
V
V
DS
= 10 V
2.0
V
GS
T
V
0.5
GS
-25
,
J
T
GS
DRAIN TO SOURCE VOLTAGE (V)
,
= 3.5 V
J
, GATE TO SOURCE VOLTAGE (V)
V
JUNCTION TEMPERATURE (
= 125
GS
= 4 V
V
GS
= 4.5 V
0
V
GS
2.5
o
= 6 V
C
= 10 V
25
μ
1.0
s
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
50
T
3.0
J
= -55
T
75
J
V
GS
= 25
1.5
o
C
= 3 V
o
100 125 150
o
3.5
C )
C
μ
s
2.0
4.0
T
J
7
= 25 °C unless otherwise noted
Figure 15. Normalized on-Resistance vs Drain
0.001
0.01
0.1
28
24
20
16
12
60
10
8
4
0
1
4
3
2
1
0
Figure 17. On-Resistance vs Gate to
0.0
Forward Voltage vs Source Current
2
0
Figure 19. Source to Drain Diode
V
GS
Current and Gate Voltage
= 0 V
V
0.2
SD
10
T
, BODY DIODE FORWARD VOLTAGE (V)
V
J
V
GS
= 125
GS
Source Voltage
V
I
4
D
,
GS
,
GATE TO SOURCE VOLTAGE (V)
= 4.5 V
DRAIN CURRENT (A)
= 3 V
0.4
20
o
C
T
T
T
J
J
J
= -55
V
= 125
T
= 25
0.6
GS
30
J
6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
= 25
I
= 6 V
D
o
o
o
= 15 A
C
V
C
C
o
GS
C
0.8
= 3.5 V
40
V
GS
V
8
GS
www.fairchildsemi.com
= 4 V
= 10 V
1.0
50
μ
μ
s
s
1.2
10
60