FDMS86101DC Fairchild Semiconductor, FDMS86101DC Datasheet - Page 5

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FDMS86101DC

Manufacturer Part Number
FDMS86101DC
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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©2012 Fairchild Semiconductor Corporation
FDMS86101DC Rev. C1
Typical Characteristics
100
0.01
300
100
10
10
0.1
10
0.001
Figure 7.
1
8
6
4
2
0
1
0.01
0
Figure 9.
I
D
Figure 11.
= 14.5 A
THIS AREA IS
LIMITED BY r
0.01
Switching Capability
V
0.1
Gate Charge Characteristics
DS
t
AV
8
, DRAIN to SOURCE VOLTAGE (V)
Operating Area
SINGLE PULSE
T
R
T
Unclamped Inductive
, TIME IN AVALANCHE (ms)
J
A
θ
Q
JA
= MAX RATED
= 25
g
DS(on)
, GATE CHARGE (nC)
Forward Bias Safe
= 81
0.1
o
C
o
1
V
C/W
DD
T
T
16
J
J
= 50 V
= 125
= 25
1
T
J
V
o
C
o
DD
= 25 °C unless otherwise noted
C
10
V
T
= 25 V
DD
J
= 100
10
= 75 V
24
o
C
100
1 ms
100 ms
1 s
10 s
DC
100 300
10 ms
32
500
5
5000
1000
2000
1000
90
75
60
45
30
15
100
100
0
10
Figure 10.
10
25
0.1
1
10
Limited by Package
Figure 12. Single Pulse Maximum
R
f = 1 MHz
V
-3
θ
Figure 8.
GS
JC
Current vs Case Temperature
= 1.0
= 0 V
10
50
V
o
-2
DS
Maximum Continuous Drain
Power Dissipation
C/W
T
to Source Voltage
, DRAIN TO SOURCE VOLTAGE (V)
C
,
Capacitance vs Drain
CASE TEMPERATURE (
t, PULSE WIDTH (sec)
10
1
75
-1
V
1
GS
100
= 6 V
10
10
o
SINGLE PULSE
R
T
C )
A
θ
V
JA
= 25
GS
125
= 81
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= 10 V
100
o
C
C
C
C
o
oss
iss
rss
C/W
150
100
1000