FDMS3660S Fairchild Semiconductor, FDMS3660S Datasheet - Page 3

• Manufacturer Part Number: FDMS3660S
• Description: This device includes two specialized N-Channel MOSFETs in a dual PQFN package
• Manufacturer: Fairchild Semiconductor

©2011 Fairchild Semiconductor Corporation
FDMS3660S Rev.C1
Electrical Characteristics
Drain-Source Diode Characteristics
Notes:
1: R
2: Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3: As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied with the negative Vgs rating.
4: E
5: E
V
t
Q
rr
SD
rr
Symbol
by the user's board design.
θJA
AS
AS
of 33 mJ is based on starting T
of 86 mJ is based on starting T
is determined with the device mounted on a 1 in
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
a. 57 °C/W when mounted on
c. 125 °C/W when mounted on a
Parameter
J
J
a 1 in
minimum pad of 2 oz copper
= 25
= 25
2
o
o
C; N-ch: L = 1.9 mH, I
C; N-ch: L = 0.6 mH, I
pad of 2 oz copper
T
J
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
= 25 °C unless otherwise noted
AS
AS
= 6 A, V
= 17 A, V
V
V
V
V
Q1:
I
Q2:
I
F
F
GS
GS
GS
GS
= 13 A, di/dt = 100 A/μs
= 30 A, di/dt = 300 A/μs
DD
= 0 V, I
= 0 V, I
= 0 V, I
= 0 V, I
DD
= 27 V, V
= 27 V, V
Test Conditions
3
S
S
S
S
= 13 A
= 2 A
= 30 A
= 2 A
GS
GS
= 10 V. 100% test at L= 0.1 mH, I
= 10 V. 100% test at L= 0.1 mH, I
(Note 2)
(Note 2)
(Note 2)
(Note 2)
d. 120 °C/W when mounted on a
b. 50 °C/W when mounted on
minimum pad of 2 oz copper
a 1 in
Type
θJC
Q1
Q1
Q2
Q2
Q1
Q2
Q1
Q2
2
is guaranteed by design while R
pad of 2 oz copper
AS
AS
= 16 A.
= 31 A.
Min
Typ
0.8
0.7
0.8
0.6
26
29
10
32
www.fairchildsemi.com
Max
1.2
1.2
1.2
1.2
42
46
20
50
θCA
is determined
Units
nC
ns
V