FDMS3660S Fairchild Semiconductor, FDMS3660S Datasheet - Page 4

• Manufacturer Part Number: FDMS3660S
• Description: This device includes two specialized N-Channel MOSFETs in a dual PQFN package
• Manufacturer: Fairchild Semiconductor

©2011 Fairchild Semiconductor Corporation
FDMS3660S Rev.C1
Typical Characteristics (Q1 N-Channel)
1.6
1.4
1.2
1.0
0.8
0.6
40
30
20
10
40
30
20
10
0
Figure 3. Normalized On Resistance
0
0.0
-75
Figure 1.
1.5
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
I
V
-50
D
DS
GS
= 13 A
vs Junction Temperature
= 5 V
= 10 V
V
0.2
V
2.0
T
DS
V
-25
J
GS
GS
,
,
On Region Characteristics
V
JUNCTION TEMPERATURE (
DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
= 3.5 V
GS
T
= 4 V
J
V
0
V
= 150
GS
GS
0.4
2.5
= 4.5 V
= 10 V
25
V
o
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
GS
C
μ
s
= 6 V
50
0.6
3.0
T
75
J
T
= -55
J
= 25
o
100 125 150
C )
0.8
3.5
o
C
o
C
μ
s
1.0
4.0
T
J
4
= 25 °C unless otherwise noted
0.001
0.01
0.1
20
16
12
40
10
Figure 2.
8
4
0
1
4
3
2
1
0
Figure 4.
0.0
Forward Voltage vs Source Current
2
0
vs Drain Current and Gate Voltage
Figure 6.
V
V
GS
GS
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
= 0 V
= 3.5 V
V
0.2
SD
, BODY DIODE FORWARD VOLTAGE (V)
Normalized On-Resistance
V
T
On-Resistance vs Gate to
J
GS
= 150
10
I
Source Voltage
4
D
Source to Drain Diode
,
,
GATE TO SOURCE VOLTAGE (V)
V
DRAIN CURRENT (A)
V
GS
0.4
GS
o
C
= 4.5 V
= 4 V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
0.6
μ
20
6
s
T
T
J
V
I
J
D
= 125
GS
= 25
= 13 A
= 6 V
0.8
T
o
o
C
J
C
T
= -55
J
30
8
= 25
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V
o
1.0
GS
C
μ
o
s
C
= 10 V
1.2
10
40