FDMS3660S Fairchild Semiconductor, FDMS3660S Datasheet - Page 8

• Manufacturer Part Number: FDMS3660S
• Description: This device includes two specialized N-Channel MOSFETs in a dual PQFN package
• Manufacturer: Fairchild Semiconductor

©2011 Fairchild Semiconductor Corporation
FDMS3660S Rev.C1
Typical Characteristics (Q2 N-Channel)
100
0.01
10
200
100
10
0.1
8
6
4
2
0
0.001
Figure 20. Gate Charge Characteristics
10
1
0.01
1
0
I
D
Figure 22. Unclamped Inductive
THIS AREA IS
LIMITED BY r
SINGLE PULSE
T
R
T
= 30 A
Figure 24. Forward Bias Safe
J
A
θ
JA
= MAX RATED
= 25
10
0.01
= 120
Switching Capability
V
o
C
DS
0.1
t
AV
o
, DRAIN to SOURCE VOLTAGE (V)
Operating Area
20
C/W
DS
Q
, TIME IN AVALANCHE (ms)
g
(
0.1
, GATE CHARGE (nC)
on
V
)
T
DD
J
30
= 125
V
= 10 V
DD
1
T
1
= 20 V
o
J
C
= 25
40
V
o
DD
C
T
10
J
= 15 V
= 100
50
10
o
C
100
60
1 ms
100
10 ms
100 ms
1s
10s
DC
100200
μ
s
1000
70
T
J
8
= 25
o
C unless otherwise noted
10000
2000
1000
1000
160
120
100
100
0.5
80
40
Figure 23. Maximun Continuous Drain
10
10
0
1
10
0.1
25
Figure 25. Single Pulse Maximum
-4
Figure 21. Capacitance vs Drain
f = 1 MHz
V
Limited by Package
Current vs Case Temperature
GS
10
= 0 V
V
-3
GS
V
Power Dissipation
50
to Source Voltage
DS
= 4.5 V
, DRAIN TO SOURCE VOLTAGE (V)
T
10
t, PULSE WIDTH (sec)
C
,
-2
CASE TEMPERATURE (
V
GS
75
10
= 10 V
1
-1
1
100
SINGLE PULSE
R
10
θ
JA
R
o
C )
θ
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JC
= 120
125
10
= 2.2
100
C
C
C
o
iss
rss
oss
C/W
o
C/W
1000
150
30