MBM29PDS322TE Fujitsu Microelectronics, Inc., MBM29PDS322TE Datasheet - Page 10

• Manufacturer Part Number: MBM29PDS322TE
• Description: Flash Memory 32m 2m X 16 Bit Page Dual Operation
• Manufacturer: Fujitsu Microelectronics, Inc.

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MBM29PDS322TE/BE
4.RD =
5.SPA = Sector group address to be protected. Set sector group address (SGA) and (A
6.HRA = Address of the Hi-ROM area
7.HRBA =Bank Address of the Hi-ROM area
8.The system should generate the following address patterns:
9.Both Read/Reset commands are functionally equivalent, resetting the device to the read mode.
SA =
BA =
PD =
SD =
Word Mode: 555h or 2AAh to addresses A
Address of the sector to be erased. The combination of A
Bank Address (A
A
Data to be programmed at location PA. Data is latched on the falling edge of write pulse.
Sector group protection verify data. Output 01h at protected sector group addresses and output
00h at unprotected sector group addresses.
29PDS322TE (Top Boot Type)Word Mode:1F8000h to 1FFFFFh
29PDS322BE (Bottom Boot Type)Word Mode:000000h to 007FFFh
29PDS322TE (Top Boot Type):A
29PDS322BE (Bottom Boot Type):A
Data read from location RA during the read operation.
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will uniquely select any sector.
20
to A
15
)
10/11
20
= A
20
19
= A
= A
19
10
18
= A
to A
= A
18
0
17
= A
= A
17
16
= A
20
= A
, A
16
15
= A
19
, A
= 1
15
18
= 0
, A
17
, A
16
, A
6
, A
15
, A
1
, A
14
0
, A
) = (0, 1, 0).
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, and