MBM29PDS322TE Fujitsu Microelectronics, Inc., MBM29PDS322TE Datasheet - Page 38

• Manufacturer Part Number: MBM29PDS322TE
• Description: Flash Memory 32m 2m X 16 Bit Page Dual Operation
• Manufacturer: Fujitsu Microelectronics, Inc.

38
MBM29PDS322TE/BE
Write Cycle Time
Address Setup Time
Address Setup Time to OE Low During
Toggle Bit Polling
Address Hold Time
Address Hold Time from CE or OE High
During Toggle Bit Polling
Data Setup Time
Data Hold Time
Output Enable
Hold Time
CE High During Toggle Bit Polling
OE High During Toggle Bit Polling
Read Recover Time Before Write
Read Recover Time Before Write
CE Setup Time
WE Setup Time
CE Hold Time
WE Hold Time
Write Pulse Width
CE Pulse Width
Write Pulse Width High
CE Pulse Width High
Programming Operation
Sector Erase Operation *
V
Rise Time to V
Rise Time to V
Voltage Transition Time *
Write Pulse Width *
OE Setup Time to WE Active *
CC
• Write/Erase/Program Operations
Setup Time
ID
ACC
Parameter
Read
Toggle and Data Polling
*
2
*
3
2
1
2
2
JEDEC
t
t
t
t
t
t
t
t
t
WHWH1
WHWH2
t
t
t
t
t
t
t
t
DVWH
WHDX
WHEH
EHWH
WLWH
WHWL
AVWL
WLAX
GHWL
AVAV
GHEL
ELWL
WLEL
ELEH
EHEL
—
—
—
—
—
—
—
—
—
—
—
10/11
Symbol
Standard Min. Typ. Max. Min. Typ. Max.
t
t
t
t
t
t
WHWH1
WHWH2
t
VACCR
t
t
t
t
t
t
t
t
GHWL
t
t
CEPH
OEPH
GHEL
OESP
t
t
t
t
VLHT
t
t
t
t
t
t
t
WPH
VIDR
WPP
ASO
AHT
OEH
CPH
VCS
WC
WS
WH
WP
AH
DS
DH
CS
CH
CP
AS
100
500
500
100
15
60
60
10
20
20
60
60
60
60
50
0
0
0
0
0
0
0
0
0
0
4
4
10
16
1
Value
115
500
500
100
15
60
60
10
20
20
60
60
60
60
50
0
0
0
0
0
0
0
0
0
0
4
4
11
16
1
(Continued)
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
ns
ns
µs
µs
µs
s