MBM29PDS322TE Fujitsu Microelectronics, Inc., MBM29PDS322TE Datasheet - Page 9

MBM29PDS322TE

Manufacturer Part Number

MBM29PDS322TE

Description

Flash Memory 32m 2m X 16 Bit Page Dual Operation

Manufacturer

Fujitsu Microelectronics, Inc.

Datasheet

1.MBM29PDS322TE.pdf (66 pages)

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*1: This command is valid while Fast Mode.

*2: This command is valid while RESET = V

*3: This command is valid while Hi-ROM mode.

*4: The data “00h” is also acceptable.

Note 1.Address bits A

Read/Reset Word

Auto

select

Program

Chip Erase

Sector

Erase

Erase Suspend

Erase Resume

Set to

Fast Mode

Fast

Program *

Reset from

Fast Mode *

Extended

Sector Group

Protection *

Query

Hi-ROM

Entry

Hi-ROM

Program *

Hi-ROM

Erase *

Hi-ROM

Exit *

Command

Sequence

2.Bus operations are defined in Table 8.

3.RA =

Address (SA), and Bank Address (BA).

PA =

Word

Address of the memory location to be programmed

Address of the memory location to be read

Addresses are latched on the falling edge of the write pulse.

Cycles

Req’d

Write

Bus

to A

Write Cycle

Table 4: MBM29PDS322TE/BE Command Definitions

XXXh F0h

XXXh A0h

XXXh 60h

Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data

555h AAh 2AAh 55h

(BA)

= X = “H” or “L” for all address commands except or Program Address (PA), Sector

First Bus

55h

B0h

30h

90h XXXh

98h

Second Bus

Write Cycle

SPA

—

F0h

60h

—

MBM29PDS322TE/BE

Write Cycle

(HRBA)

555h

Third Bus

(BA)

SPA

—

A0h

F0h

90h

80h

20h

40h

88h

80h

90h XXXh 00h

—

(HRA)

Fourth Bus

Read/Write

555h AAh 2AAh 55h

SPA

—

Cycle

—

Write Cycle

Fifth Bus

—

Write Cycle

555h

HRA

Sixth Bus

—

10/11

10h

30h

—

MBM29PDS322TE Fujitsu Microelectronics, Inc., MBM29PDS322TE Datasheet - Page 9

MBM29PDS322TE

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