MBM29PDS322TE Fujitsu Microelectronics, Inc., MBM29PDS322TE Datasheet - Page 44

• Manufacturer Part Number: MBM29PDS322TE
• Description: Flash Memory 32m 2m X 16 Bit Page Dual Operation
• Manufacturer: Fujitsu Microelectronics, Inc.

44
MBM29PDS322TE/BE
Address
CE
OE
WE
Data
Notes: 1.PA is address of the memory location to be programmed.
2.PD is data to be programmed at word address.
3.DQ
4.D
5.Figure indicates last two bus cycles out of four bus cycle sequence.
OUT
Figure 6 Alternate WE Controlled Program Operation Timing Diagram
7
t
GHWL
is the output of the complement of the data written to the device.
is the output of the data written to the device.
3rd Bus Cycle
t
CS
555h
t
WC
t
t
WP
DS
A0h
t
DH
t
WPH
t
AS
t
CH
PA
t
PD
AH
10/11
t
WHWH1
Data Polling
DQ
PA
7
D
OUT
t
RC
t
CE
t
OE
D
OUT
t
OH