MBM29PDS322TE Fujitsu Microelectronics, Inc., MBM29PDS322TE Datasheet - Page 8

no-image

MBM29PDS322TE

Manufacturer Part Number
MBM29PDS322TE
Description
Flash Memory 32m 2m X 16 Bit Page Dual Operation
Manufacturer
Fujitsu Microelectronics, Inc.
Datasheet
8
MBM29PDS322TE/BE
Legend: L = V
*1: Manufacturer and device codes may also be accessed via a command register write sequence. See Table 3.
*2: Refer to section on Sector Group Protection.
*3: WE can be V
*4: V
*5: It is also used for the extended sector group protection.
*6: Protect “outermost” 2
Auto-Select Manufacturer
Code *
Auto-Select Device Code *
Extended Auto-Select Device
Code *
Read *
Standby
Output Disable
Write (Program/Erase)
Enable Sector Group
Protection *
Verify Sector Group Protection
*
Temporary Sector Group
Unprotection *
Reset (Hardware) / Standby
Boot Block Sector Write
Protection *
2,
DEVICE BUS OPERATION
*
4
CC
must be between the minimum and maximum of the operation range.
1
1
3
Operation
2,
6
*
IL
4
5
, H = V
IL
if OE is V
IH
, X = V
4 Kwords of the boot block sectors.
1
IL
, OE at V
IL
Table 3: MBM29PDS322TE/BE User Bus Operations
or V
CE OE WE
H
X
X
X
L
L
L
L
L
L
L
L
IH
,
IH
V
X
H
H
X
X
X
L
L
L
L
L
initiates the write operations.
ID
= Pulse input. See DC Characteristics for voltage levels.
H
H
H
H
H
H
X
L
X
X
X
L/H
10/11
A
A
A
H
X
X
X
X
X
L
L
L
0
0
0
A
A
A
H
X
X
H
H
X
X
X
L
L
1
1
1
A
A
A
H
X
X
X
X
X
L
L
L
L
2
2
2
A
A
A
H
X
X
X
X
X
L
L
L
L
3
3
3
A
A
A
L
L
X
X
X
X
X
L
L
L
6
6
6
V
V
V
V
V
A
A
A
X
X
X
X
X
ID
ID
ID
ID
ID
9
9
9
DQ
High-Z
High-Z
High-Z
Code
Code
Code
Code
D
DQ
D
X
X
X
OUT
15
IN
0
to
RESET
V
H
H
H
H
H
H
H
H
H
L
X
ID
ACC
WP/
X
X
X
X
X
X
X
X
X
X
X
L

Related parts for MBM29PDS322TE