MBM29PDS322TE Fujitsu Microelectronics, Inc., MBM29PDS322TE Datasheet - Page 37

• Manufacturer Part Number: MBM29PDS322TE
• Description: Flash Memory 32m 2m X 16 Bit Page Dual Operation
• Manufacturer: Fujitsu Microelectronics, Inc.

2. AC Characteristics
Read Cycle Time
Address to Output Delay
Page Read Cycle Time
Page Address to Output Delay
Chip Enable to Output Delay
Output Enable to Output Delay
Chip Enable to Output High-Z
Output Enable to Output High-Z
Output Hold Time From Addresses,
CE or OE, Whichever Occurs First
RESET Pin Low to Read Mode
Note: Test Conditions:
• Read Only Operations Characteristics
Output Load: C
Input rise and fall times: 5 ns
Input pulse levels: 0.0 V to 2.0 V
Timing measurement reference level
Input: 1.0 V
Output: 1.0 V
Parameter
L
= 50 pF
JEDEC
t
t
t
t
t
t
t
AVQV
GLQV
EHQZ
GHQZ
AXQX
Figure 4 Test Conditions
AVAV
ELQV
—
—
—
Device
Under
Test
Symbol
Standard
t
t
READY
t
t
PACC
t
t
t
t
ACC
PRC
t
t
C
MBM29PDS322TE/BE
RC
OE
OH
CE
DF
DF
L
CE = V
OE = V
CE = V
OE = V
OE = V
Conditions
—
—
—
—
—
—
—
IL
IL
IL
IL
IL
Min. Max. Min. Max.
100
45
0
10
Value(Note)
100
100
45
35
30
30
20
115
45
0
11
115
115
45
45
30
30
20
10/11
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
s
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