MBM29PDS322TE Fujitsu Microelectronics, Inc., MBM29PDS322TE Datasheet - Page 26

• Manufacturer Part Number: MBM29PDS322TE
• Description: Flash Memory 32m 2m X 16 Bit Page Dual Operation
• Manufacturer: Fujitsu Microelectronics, Inc.

26
MBM29PDS322TE/BE
Erase Suspend/Resume
Extended Command
The Erase Suspend command allows the user to interrupt a Sector Erase operation and then perform data reads
from or programs to a sector not being erased. This command is applicable ONLY during the Sector Erase
operation which includes the time-out period for sector erase. Writing the Erase Suspend command (B0h) during
the Sector Erase time-out results in immediate termination of the time-out period and suspension of the erase
operation.
Writing the Erase Resume command (30h) resumes the erase operation. The bank addresses of sector being
erased or erase-suspended should be set when writing the Erase Suspend or Erase Resume command.
When the Erase Suspend command is written during the Sector Erase operation, the device will take a maximum
of “t
RY/BY output pin will be at Hi-Z and the DQ
use the address of the erasing sector for reading DQ
suspended. Further writes of the Erase Suspend command are ignored.
When the erase operation has been suspended, the device defaults to the erase-suspend-read mode. Reading
data in this mode is the same as reading from the standard read mode except that the data must be read from
sectors that have not been erase-suspended. Successively reading from the erase-suspended sector while the
device is in the erase-suspend-read mode will cause DQ
After entering the erase-suspend-read mode, the user can program the device by writing the appropriate com-
mand sequence for Program. This program mode is known as the erase-suspend-program mode. Again, pro-
gramming in this mode is the same as programming in the regular Program mode except that the data must be
programmed to sectors that are not erase-suspended. Successively reading from the erase-suspended sector
while the device is in the erase-suspend-program mode will cause DQ
Program operation is detected by the RY/BY output pin, Data polling of DQ
is the same as the regular Program operation. Note that DQ
can be read from any address within bank being erase-suspended.
To resume the operation of Sector Erase, the Resume command (30h) should be written to the bank being erase
suspended. Any further writes of the Resume command at this point will be ignored. Another Erase Suspend
command can be written after the chip has resumed erasing.
(1) Fast Mode
(2) Fast Programming
The device has Fast Mode function. This mode dispenses with the initial two unclock cycles required in the
standard program command sequence by writing Fast Mode command into the command register. In this
mode, the required bus cycle for programming is two cycles instead of four bus cycles in standard program
command. (Do not write erase command in this mode.) The read operation is also executed after exiting this
mode. To exit this mode, it is necessary to write Fast Mode Reset command into the command register. The
first cycle must contain the bank address. (Refer to the Figure 27.) The V
CE = V
During Fast Mode, the programming can be executed with two bus cycles operation. The Embedded Program
Algorithm is executed by writing program set-up command (A0h) and data write cycles (PA/PD). (Refer to
the Figure 27.)
SPD
” to suspend the erase operation. When the device has entered the erase-suspended mode, the
IH
during Fast Mode.
7
bit will be at logic “1”, and DQ
10/11
6
and DQ
2
to toggle. (See the section on DQ
7
must be read from the Program address while DQ
7
to determine if the erase operation has been
2
to toggle. The end of the erase-suspended
7
6
or by the Toggle Bit I (DQ
CC
will stop toggling. The user must
active current is required even
2
.)
6
) which
6