MBM29PDS322TE Fujitsu Microelectronics, Inc., MBM29PDS322TE Datasheet - Page 21

• Manufacturer Part Number: MBM29PDS322TE
• Description: Flash Memory 32m 2m X 16 Bit Page Dual Operation
• Manufacturer: Fujitsu Microelectronics, Inc.

Write
Sector Group Protection
Temporary Sector Group Unprotection
Extended Sector Group Protection
Device erasure and programming are accomplished via the command register. The contents of the register serve
as inputs to the internal state machine. The state machine outputs dictate the function of the device.
The command register itself does not occupy any addressable memory location. The register is a latch used to
store the commands, along with the address and data information needed to execute the command. The com-
mand register is written by bringing WE to V
falling edge of WE or CE, whichever happens later; while data is latched on the rising edge of WE or CE,
whichever happens first. Standard microprocessor write timings are used.
Refer to AC Write Characteristics and the Erase/Programming Waveforms for specific timing parameters.
The device features hardware sector group protection. This feature will disable both program and erase opera-
tions in any combination of twenty five sector groups of memory. (See Table 7.) The sector group protection
feature is enabled using programming equipment at the user’s site. The device is shipped with all sector groups
unprotected.
To activate this mode, the programming equipment must force V
V
A
for each of the seventy one (71) individual sectors, and tables 7.1 and 7.2 define the sector group address for
each of the twenty five (25) individual group sectors. Programming of the protection circuitry begins on the falling
edge of the WE pulse and is terminated with the rising edge of the same. Sector group addresses must be held
constant during the WE pulse. See Figures 16 and 24 for sector group protection waveforms and algorithm.
To verify programming of the protection circuitry, the programming equipment must force V
with CE and OE at V
and A
protected sector. Otherwise the device will produce “0” for unprotected sector. In this mode, the lower order
addresses, except for A
Autoselect manufacturer and device codes.
It is also possible to determine if a sector group is protected in the system by writing an Autoselect command.
Performing a read operation at the address location XX02h, where the higher order addresses (A
A
sector group. See Tables 5.1 to 5.4 for Autoselect codes.
This feature allows temporary unprotection of previously protected sector groups of the device in order to change
data. The Sector Group Unprotection mode is activated by setting the RESET pin to high voltage (V
this mode, formerly protected sector groups can be programmed or erased by selecting the sector group ad-
dresses. Once the V
protected again. Refer to Figures 17 and 25.
In addition to normal sector group protection, the device has Extended Sector Group Protection as extended
function. This function enables to protect sector group by forcing V
sequence. Unlike conventional procedure, it is not necessary to force V
only RESET pin requires V
requires V
into the command register. Then, the sector group addresses pins (A
and (A
for the other addresses pins), and write extended sector group protection command (60h). A sector group is
ID
16
16
, A
, A
= 11.5 V), CE = V
15
15
12
6
, A
, A
, A
) while (A
14
14
3
ID
, A
, A
, A
on RESET pin. With this condition, the operation is initiated by writing the set-up command (60h)
2
13
13
, A
, and A
, and A
1
6
, A
, A
IL
0
ID
3
) = (0, 0, 0, 1, 0) should be set to the sector group to be protected (recommend to set V
IL
, A
12
and WE at V
12
is taken away from the RESET pin, all the previously protected sector groups will be
and (A
0
) should be set to the sector to be protected. Tables 6.1 and 6.2 define the sector address
, A
) are the desired sector group address will produce a logical “1” at DQ
2
, A
1
, A
ID
1
, A
for sector group protection in this mode. The extended sector group protection
6
2
, A
, A
0
) = (0, 0, 0, 1, 0) will produce a logical “1” code at device output DQ
3
3
, A
, and A
IH
. Scanning the sector group addresses (A
2
, A
1
6
, A
are DON’T CARES. Address locations with A
IL
0
, while CE is at V
) = (0, 0, 0, 1, 0). The sector group addresses (A
MBM29PDS322TE/BE
IL
ID
and OE is at V
on address pin A
ID
20
ID
, A
on RESET pin and write a command
and control timing for control pins. The
19
, A
18
IH
20
. Addresses are latched on the
, A
, A
9
and control pin OE, (suggest
19
17
, A
, A
18
16
1
, A
, A
= V
ID
17
15
on address pin A
, A
IL
, A
are reserved for
0
20
16
20
14
for a protected
, A
, A
, A
, A
19
15
19
13
ID
, A
, A
, A
). During
and A
10/11
18
14
18
0
, A
, A
, A
for a
12
17
13
17
IL
9
)
,
,
,
21