MBM29PDS322TE Fujitsu Microelectronics, Inc., MBM29PDS322TE Datasheet - Page 49

• Manufacturer Part Number: MBM29PDS322TE
• Description: Flash Memory 32m 2m X 16 Bit Page Dual Operation
• Manufacturer: Fujitsu Microelectronics, Inc.

WE
DQ
DQ
6
2
Note: This is example of Read for Bank 1 and Embedded Algorithm (program) for Bank 2.
Embedded
OE
WE
DQ
Address
CE
Erasing
Enter
BA1: Address of Bank 1.
BA2: Address of Bank 2.
DQ
Note: DQ
with OE
Toggle
2
Erase
and DQ
Suspend
Erase
Figure 11 Bank-to-Bank Read/Write Timing Diagram
2
Read
BA1
6
t
is read from the erase-suspended sector.
RC
t
GHWL
Output
t
Valid
AS
Erase Suspend
Read
Command
(555h)
t
t
(A0h)
Valid
Input
BA2
WP
DS
t
WC
Suspend Program
t
AH
Figure 12 DQ
Enter Erase
t
DH
t
OEH
t
OE
t
ACC
Read
BA1
t
RC
Suspend
MBM29PDS322TE/BE
t
Program
Output
CE
Valid
Erase
2
vs. DQ
t
DF
Command
t
(PA)
BA2
DF
Valid
Input
(PD)
t
WC
Erase Suspend
6
Read
Read
BA1
t
t
Resume
AHT
RC
Erase
Output
Valid
t
CEPH
Erase
Read
BA2
(PA)
t
t
AS
WC
Status
Complete
Erase
10/11
49