ISL9N306AD3ST Fairchild Semiconductor, ISL9N306AD3ST Datasheet
ISL9N306AD3ST
Manufacturer Part Number
ISL9N306AD3ST
Description
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V/ 50A/ 6m
Manufacturer
Fairchild Semiconductor
©2003 Fairchild Semiconductor Corporation
ISL9N306AD3 / ISL9N306AD3ST
N-Channel Logic Level PWM Optimized UltraFET
30V, 50A, 6m
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Applications
• DC/DC converters
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
R
V
V
I
P
T
R
R
D
GS
J
DSS
D
Symbol
, T
JC
JA
JA
Device Marking
STG
N306AD
N306AD
SOURCE
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
Continuous (T
Continuous (T
Pulsed
Power dissipation
Derate above 25
Operating and Storage Temperature
Thermal Resistance Junction to Case TO-251, TO-252
Thermal Resistance Junction to Ambient TO-251, TO-252
Thermal Resistance Junction to Ambient TO-252, 1in
GATE
TO-252
DRAIN (FLANGE)
C
C
C
ISL9N306AD3ST
ISL9N306AD3
= 25
= 100
= 25
o
C
Device
o
o
C, V
C, V
o
C, V
GS
GS
GS
= 10V)
= V, R
Parameter
= 4.5V)
T
A
= 25°C unless otherwise noted
(FLANGE)
DRAIN
JC
= 52
TO-252AA
TO-251AA
Package
o
C/W)
TO-251
Features
• Fast switching
• r
• r
• Q
• Q
• C
DS(ON)
DS(ON)
SOURCE
2
ISS
g
gd
copper pad area
(Typ) = 30nC, V
(Typ) = 11nC
(Typ) = 3400pF
Reel Size
330mm
= 0.0052 (Typ), V
= 0.0085 (Typ), V
DRAIN
GATE
Tube
®
Trench Power MOSFETs
GS
= 5V
Tape Width
16mm
GS
GS
N/A
-55 to 175
Ratings
Figure 4
G
= 10V
= 4.5V
0.83
125
100
1.2
30
50
50
16
52
ISL9N306AD3 / ISL9N306AD3ST Rev. B2
20
D
S
2500 units
Quantity
75 units
June 2003
o
o
o
Units
C/W
C/W
C/W
W/
o
W
V
V
A
A
A
A
C
o
C
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