ISL9N306AD3ST Fairchild Semiconductor, ISL9N306AD3ST Datasheet - Page 4

• Manufacturer Part Number: ISL9N306AD3ST
• Description: N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V/ 50A/ 6m
• Manufacturer: Fairchild Semiconductor

©2003 Fairchild Semiconductor Corporation
Typical Characteristic
Figure 7. Drain to Source On Resistance vs Gate
Figure 9. Normalized Gate Threshold Voltage vs
100
75
50
25
0
25
20
15
10
1.4
1.0
0.6
0.2
5
1
Figure 5. Transfer Characteristics
-80
2
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
V
T
DD
I
J
D
= 25
= 15V
=5A
Voltage and Drain Current
-40
Junction Temperature
o
C
V
V
GS
GS
T
J
T
I
2
, GATE TO SOURCE VOLTAGE (V)
D
, GATE TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
4
J
= 25A
= 175
0
I
D
= 50A
o
C
40
T
3
6
J
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
T
= -55
C
(Continued)
80
= 25
V
o
GS
C
o
C
= V
120
DS
8
4
o
, I
C)
D
= 250 A
160
200
10
5
Breakdown Voltage vs Junction Temperature
100
Figure 8. Normalized Drain to Source On
75
50
25
1.2
1.1
1.0
0.9
Figure 10. Normalized Drain to Source
0
2.0
1.5
1.0
0.5
Resistance vs Junction Temperature
Figure 6. Saturation Characteristics
0
-80
-80
V
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
GS
= 10V
-40
-40
V
DS
T
T
0.5
J
J
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
, JUNCTION TEMPERATURE (
0
0
40
40
V
GS
1.0
= 4.5V
T
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
ISL9N306AD3 / ISL9N306AD3ST Rev. B2
80
80
C
= 25
V
o
GS
C
120
120
= 10V, I
1.5
o
o
C)
C)
V
V
I
GS
D
GS
160
160
D
= 250 A
= 3.5V
= 3V
= 50A
200
200
2.0