ISL9N306AD3ST Fairchild Semiconductor, ISL9N306AD3ST Datasheet - Page 3

• Manufacturer Part Number: ISL9N306AD3ST
• Description: N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V/ 50A/ 6m
• Manufacturer: Fairchild Semiconductor

©2003 Fairchild Semiconductor Corporation
Typical Characteristic
Figure 1. Normalized Power Dissipation vs
1.2
1.0
0.8
0.6
0.4
0.2
1000
2000
100
0
0.01
40
0.1
0
10
2
1
10
-5
-5
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
25
Ambient Temperature
V
GS
T
= 10V
50
C
, CASE TEMPERATURE (
Figure 3. Normalized Maximum transient Thermal Impedance
10
V
10
GS
75
-4
-4
= 5V
SINGLE PULSE
100
Figure 4. Peak Current Capability
125
o
C)
10
10
-3
-3
t, RECTANGULAR PULSE DURATION (s)
150
175
t, PULSE WIDTH (s)
10
Figure 2. Maximum Continuous Drain Current vs
10
-2
-2
60
50
40
30
20
10
0
25
50
10
Case Temperature
10
-1
T
-1
C
NOTES:
DUTY FACTOR: D = t
PEAK T
, CASE TEMPERATURE (
75
J
= P
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
T
100
DM
C
I = I
V
V
= 25
GS
GS
x Z
25
ISL9N306AD3 / ISL9N306AD3ST Rev. B2
= 10V
= 4.5V
o
10
10
P
C
JC
0
DM
1
0
o
125
/t
x R
C DERATE PEAK
2
175 – T
o
C)
JC
150
t
1
+ T
t
2
150
C
C
10
10
175
1
1