f25l08pa Elite Semiconductor Memory Technology Inc., f25l08pa Datasheet - Page 22

• Manufacturer Part Number: f25l08pa
• Description: 3v Only 8 Mbit Serial Flash Memory With Dual
• Manufacturer: Elite Semiconductor Memory Technology Inc.

ESMT
Absolute Maximum Stress Ratings
(Applied conditions are greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this datasheet is not implied. Exposure to absolute maximum stress rating conditions may affect device
reliability.)
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to VDD+2.0V
Package Power Dissipation Capability (T
Surface Mount Lead Soldering Temperature (3 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240°C
Output Short Circuit Current (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
( Note 1: Output shorted for no more than one second. No more than one output shorted at a time. )
AC CONDITIONS OF TEST
OPERATING RANGE
Table 9: DC OPERATING CHARACTERISTICS
Table 10: LATCH UP CHARACTERISTIC
Note 1: This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
Elite Semiconductor Memory Technology Inc.
Input Rise/Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 ns
Output Load . . . . . . . . . . . . . . . . . . . . . . . . C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .C
See Figures 28 and 29
Symbol
ELECTRICAL SPECIFICATIONS
Operating Supply Voltage
Ambient Operating Temperature
I
I
I
I
I
I
I
V
V
V
V
I
Symbol
DDR1
DDR2
DDR3
DDW
SB
LI
LO
LTH
IL
IH
OL
OH
1
Parameter
Read Current
@33 MHz
Read Current
@ 50MHz
Read Current
@ 100MHz
Program and Erase Current
Standby Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Latch Up
Parameter
Parameter
Standard
Dual
Standard
Dual
Standard
Dual
V
V
A
DD
DD
= 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
(for F
(for F
L
L
= 15 pF for ≧75MHz
= 30 pF for ≦50MHz
Symbol
0.7 x V
V
CLK
CLK
T
DD
Min
A
-0.2
<= 50MHz)
= 100MHz)
Minimum
100 + I
DD
Limits
Max
0.8
0.2
15
18
20
23
25
28
35
30
DD
1
1
Unit
mA
mA
mA
mA
µA
µA
µA
V
V
V
V
2.7 ~ 3.6
3.0 ~3.6
V
V
V
V
I
I
Unit
0 ~ 70
Value
CE =0.1 V
CE =0.1 V
CE =0.1 V
CE =V
CE =V
mA
OL
OH
IN
OUT
DD
DD
=100 µA, V
=-100 µA, V
=GND to V
=V
=V
=GND to V
DD
DD
DD
DD
, V
Min
Max
DD
DD
DD
IN
/0.9 V
/0.9 V
/0.9 V
=V
DD
DD
DD
DD
JEDEC Standard 78
, V
=V
DD
=V
, V
DD
DD
DD
DD
DD
or V
Test Method
Test Condition
DD
Unit
DD
Publication
, SO=open
, SO=open
, SO=open
=V
Revision: 1.7
℃
V
Min
Min
=V
SS
DD
DD
Max
Max
F25L08PA
Date: Jul. 2009
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