lrs1338a Sharp Microelectronics of the Americas, lrs1338a Datasheet - Page 23

• Manufacturer Part Number: lrs1338a
• Description: Stacked Chip Flash Memory Sram
• Manufacturer: Sharp Microelectronics of the Americas

Stacked Chip (8M Flash & 2M SRAM)
FLASH AC CHARACTERISTICS — WRITE OPERATIONS
NOTES:
1. Read timing characteristics during block erase and word write operations are the
2. Sampled, not 100% tested.
3. Refer to Table 6 for valid A
4. V
Data Sheet
V
SYMBOL
same as during read-only operations. Refer to ‘AC Characteristics’ section for read-only operations.
determination of block erase or word write success (SR.1, SR.3, SR.4, SR.5 = 0).
t
PP
CC
t
PHHWH
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
WLWH
WHWL
SHWH
VPWH
AVWH
DVWH
WHDX
WHAX
WHEH
WHGL
PHWL
QVPH
AVAV
ELWL
QVVL
QVSL
should be held at V
= 2.7 V to 3.6 V, T
Write Cycle Time
RP HIGH Recovery to WE Going LOW
CE Setup to WE Going LOW
WE Pulse Width
RP V
WP V
V
Address Setup to WE Going HIGH
Data Setup to WE Going HIGH
Data Hold from WE HIGH
Address Hold from WE HIGH
CE Hold from WE HIGH
WE Pulse Width HIGH
Write Recovery before Read
V
RP V
WP V
PP
PP
Setup to WE Going HIGH
Hold from Valid SRD HIGH
HH
HH
IH
IH
PPH
Setup to WE Going HIGH
Hold from Valid SRD HIGH
to WE Going HIGH
Hold from Valid SRD HIGH
IN
(and if necessary RP should be held at V
A
PARAMETER
and D
= -40°C to +85°C
IN
for block erase or word write.
MIN.
120
100
100
100
10
50
50
50
10
30
1
5
5
0
0
0
0
HH
1
) until
MAX.
UNIT
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
2, 4
2, 4
2, 4
2
2
2
2
3
3
LRS1338A
23