lrs1338a Sharp Microelectronics of the Americas, lrs1338a Datasheet - Page 27

• Manufacturer Part Number: lrs1338a
• Description: Stacked Chip Flash Memory Sram
• Manufacturer: Sharp Microelectronics of the Americas

Stacked Chip (8M Flash & 2M SRAM)
RESET OPERATIONS
BLOCK ERASE AND WORD WRITE PERFORMANCE
NOTES:
1. Sampled, but not 100% tested.
2. Typical values measured at T
3. Excludes system-level overhead.
Data Sheet
t
t
WHRH1
WHRH2
V
Subject to change based on device characterization.
SYMBOL
CC
t
t
t
t
NOTES:
1. If RP is asserted while a block erase or word write operation is not executing,
2. When the device power-up holding RP LOW minimum 100 ns is required
WHQV1
WHQV2
EHQV1
EHQV2
SYMBOL
= 2.7 V to 3.6 V, T
, t
, t
the reset will complete within 100 ns.
after V
t
t
PLPH
EHRH1
EHRH2
VPH
CC
RP (P)
RP (P)
has been in predefined range and also has been stable there.
Word Write Time 32K-word Block
Word Write Time 4K-word Block
Block Write Time 32K-word Block
Block Write Time 4K-word Block
Block Erase Time 32K-word Block
Block Erase Time 4K-word Block
Word Write Suspend Latency Time to Read
Erase Suspend Latency Time to Read
V
RP Pulse LOW Time (if RP is tied to V
this specification is not applicable)
V
CC
CC
2.7 V - 3.6 V
2.7 V to RP HIGH
V
V
V
V
V
IH
IH
IL
IL
IL
A
A
= 40°C to +85°C
= +25°C and nominal voltages.
PARAMETER
Figure 15. AC Waveform for Reset Operation
PARAMETER
A. Reset during Block Erase or Word Write or Read Array Mode
B. RP rising Timing
Table 11. Reset AC Specifications
t
PLPH
t
VPH
1
CC
,
MIN.
V
V
CC
MIN.
PP
100
100
= 2.7 V to 3.6 V
= 2.7 V to 3.6 V
MAX.
18
7
MAX.
TYP.
44.6
45.9
1.46
0.19
1.14
0.38
22
8
2
UNIT
ns
ns
UNIT
sec
sec
sec
sec
µs
µs
µs
µs
NOTES
1
2
LRS1338A
LRS1338A-15
NOTES
3
3
3
3
3
3
27