lrs1338a Sharp Microelectronics of the Americas, lrs1338a Datasheet - Page 31

• Manufacturer Part Number: lrs1338a
• Description: Stacked Chip Flash Memory Sram
• Manufacturer: Sharp Microelectronics of the Americas

Stacked Chip (8M Flash & 2M SRAM)
READ CYCLE
NOTE: *Active output to HIGH impedance to output active tests specified for
WRITE CYCLE
NOTE: *Active output to HIGH impedance to output active tests specified for
DATA RETENTION CHARACTERISTICS
Data Sheet
Read cycle time
Address access time
CE access time
Output enable to output valid
Output hold from address change
CE LOW to output active*
OE LOW to output active*
CE HIGH to output in HIGH impedance*
OE HIGH to output in HIGH impedance*
Write cycle time
Chip enable to end of write
Address valid to end of write
Address setup time
Write pulse width
Write recovery time
Input data setup time
Input data hold time
WE HIGH to output active*
WE LOW to output in HIGH impedance*
OE HIGH to output in HIGH impedance*
Data retention supply voltage
Data retention supply voltage
Chip enable setup time
Chip enable hold time
T
T
T
A
A
A
a ±200 mV transition from steady state levels into the test load.
a ±200 mV transition from steady state levels into the test load.
= -40°C to + 85°C, V
= -40°C to + 85°C, V
= -40°C to + 85°C
PARAMETER
PARAMETER
PARAMETER
CC
CC
= 2.7 V to 3.6 V
= 2.7 V to 3.6 V
SYMBOL
V
I
CCDR
t
CCDR
CDR
t
R
SYMBOL
SYMBOL
CE
V
CE
V
t
t
t
CCDR
CCDR
t
t
t
t
t
t
t
t
t
t
t
t
t
t
ACE
t
OHZ
t
OHZ
t
OLZ
WC
CW
WR
DW
OW
AW
WP
WZ
RC
OE
OH
DH
AA
HZ
AS
LZ
V
V
CCDR
CCDR
= 3 V,
= 3 V, CE V
CONDITIONS
- 0.2 V
– 0.2 V, T
MIN.
MIN.
85
10
10
85
75
75
65
35
5
0
0
0
0
0
5
0
0
CCDR
A
= 25°C
– 0.2 V
MAX.
MAX.
85
85
45
30
30
30
30
MIN.
2
0
5
UNIT
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
TYP.
0.6
MAX.
3.6
1.0
35
LRS1338A
UNIT
ms
µA
µA
ns
V
31