lrs1338a Sharp Microelectronics of the Americas, lrs1338a Datasheet - Page 5

• Manufacturer Part Number: lrs1338a
• Description: Stacked Chip Flash Memory Sram
• Manufacturer: Sharp Microelectronics of the Americas

Stacked Chip (8M Flash & 2M SRAM)
DC ELECTRICAL CHARACTERISTICS
NOTES:
1. This value is read current (I
2. Sampled but not 100% tested.
3. This value is operation current (I
4. This value is operation current (I
5. This value is operation current (I
Data Sheet
Input leakage current
Output leakage current
Operating supply
current
Output voltage
Standby current
T
A
PARAMETER
= -40°C to + 85°C, V
SYMBOL
CCR
V
V
I
I
I
I
I
CC
I
CC
CC
LO
SB
SB
OL
OH
LI
+ I
CCW
CCE
CC1
,
= 2.7 V to 3.6 V
PPR
) of SRAM.
+ I
+ I
) of flash memory.
V
F-CE, S-CE = V
F-WE, S-WE = V
Read current, F-V
F-CE
V
t
Summation of V
rent, and V
F-V
Summation of V
lock-bits current, and V
Block lock-bits current. F-V
S-CE = 0.2 V, V
t
F-CE = V
F-CE
S-CE = V
S-CE
I
I
PPE
CYCLE
CYCLE
OL
OH
PPW
IN
IN
CC
= 2.0 mA
) of flash memory.
= 0V to V
= 1.0 mA
) of flash memory.
0.2 V
= 200 ns, I
= 200 ns, I
0.2 V, V
V
V
3.0 V
IH
CC
IH
CC
PP
, RP = V
– 0.2 V, RP
– 0.2 V
CC
Byte Write or set lock-bit current.
IN
IH
CC
CC
IN
IH
CONDITION
PP
I/O
I/O
or F-OE, S-OE = V
, V
Byte Write or set lock-bit cur-
Block Erase or Clear Block
IH
V
V
= 0 mA
= 0 mA
I/O
CC
CC
F-V
PP
= 0 V to V
– 0.2 V or
– 0.2 V or V
Block Erase or Clear
CC
0.2 V
CC
6. This value is standby current (I
7. This value is deep power down current (I
8. This value is standby current (I
9. This value is standby current (I
10. Reference values at V
,
flash memory.
3.0 V
CC
IN
IH
or
0.2 V
MIN.
-1.5
-1.5
2.4
CC
= 3.0 V and T
TYP.
CCS
SB1
SB
0.6
) of SRAM.
) of SRAM
+ I
PPS
MAX. UNIT NOTES
A
1.5
1.5
2.0
3.0
0.4
25
57
42
25
20
40
) of flash memory.
CCD
= +25°C
+ I
mA
mA
mA
mA
mA
mA
PPD
µA
µA
µA
µA
V
V
LRS1338A
) of
9, 10
2, 3
2, 4
1
5
6
7
8
5