MT48LC16M4A2 Micron Technology, MT48LC16M4A2 Datasheet - Page 48

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MT48LC16M4A2

Manufacturer Part Number
MT48LC16M4A2
Description
SYNCHRONOUS DRAM
Manufacturer
Micron Technology
Datasheet

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TIMING PARAMETERS
*CAS latency indicated in parentheses.
NOTE: 1. For this example, the burst length = 4, and the WRITE burst is followed by a “manual” PRECHARGE.
64Mb: x4, x8, x16 SDRAM
64MSDRAM_F.p65 – Rev. F; Pub. 1/03
DQML, DQMH
SYMBOL* MIN MAX MIN MAX MIN MAX MIN MAX UNITS
t
t
t
t
t
t
t
t
t
AH
AS
CH
CL
CK(3)
CK(2)
CKH
CKS
CMH
COMMAND
A0-A9, A11
BA0, BA1
DQM /
CKE
A10
CLK
DQ
2. 15ns is required between <D
3. x16: A8, A9 and A11 = “Don’t Care”
1.5
2.5
2.5
1.5
x8: A9 and A11 = “Don’t Care”
x4: A11 = “Don’t Care”
t CMS
1
6
1
1
t CKS
t AS
t AS
t AS
-6
ACTIVE
T0
ROW
ROW
BANK
t CKH
t CMH
t AH
t AH
t AH
t RCD
t RAS
t RC
0.8
1.5
2.5
2.5
7.5
0.8
1.5
0.8
7
-7E
t CK
T1
NOP
DISABLE AUTO PRECHARGE
0.8
1.5
2.5
2.5
7.5
0.8
1.5
0.8
10
WRITE – WITHOUT AUTO PRECHARGE
-75
t CMS
t CL
t DS
IN
COLUMN m 3
m> and the PRECHARGE command, regardless of frequency.
WRITE
BANK
T2
D
IN
t CMH
t CH
t DH
m
10
1
2
3
3
8
1
2
1
-8E
t DS
D
IN
T3
NOP
m + 1
t DH
ns
ns
ns
ns
ns
ns
ns
ns
ns
48
t DS
D
IN
T4
NOP
m + 2
t DH
SYMBOL* MIN MAX MIN MAX MIN MAX MIN MAX UNITS
t
t
t
t
t
t
t
t
CMS
DH
DS
RAS
RC
RCD
RP
WR
t DS
D
IN
NOP
T5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
m + 3
1.5
1.5
42 120,000
60
18
18
12
1
t DH
-6
t WR
SINGLE BANK
PRECHARGE
ALL BANKS
2
BANK
T6
1.5
0.8
1.5
37 120,000
60
15
15
14
1
-7E
64Mb: x4, x8, x16
1.5
0.8
1.5
44 120,000
66
20
20
15
NOP
t RP
T7
-75
©2003, Micron Technology, Inc.
SDRAM
50 120,000
70
20
20
15
2
1
2
ACTIVE
ROW
-8E
ROW
BANK
T8
DON’T CARE
ns
ns
ns
ns
ns
ns
ns
ns

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