HD6417606 RENESAS [Renesas Technology Corp], HD6417606 Datasheet - Page 181

• Manufacturer Part Number: HD6417606
• Manufacturer: RENESAS [Renesas Technology Corp]

Section 7 Bus State Controller (BSC)
7.5.5
SDRAM Interface
SDRAM Direct Connection: The SDRAM that can be connected to this LSI is a product that has
11/12/13 bits of row address, 8/9/10 bits of column address, 4 or less banks, and uses the A10 pin
for setting precharge mode in read and write command cycles.
The control signals for direct connection of SDRAM are RAS, CAS, RD/WR, DQMLU, DQMLL,
CKE, and CS3. Signals other than CKE are valid when CS3 is asserted. SDRAM can be connected
to area 2. The data bus width of the area that is connected to SDRAM can be set to 16 bits.
Burst read/single write (burst length 1) and burst read/burst write (burst length 1) are supported as
the SDRAM operating mode.
Commands for SDRAM can be specified by RAS, CAS, RD/WR, and specific address signals.
These commands are shown below.
• NOP
• Auto-refreshing (REF)
• Self-refreshing (SELF)
• All banks precharge (PALL)
• Specified bank precharge (PRE)
• Bank active (ACTV)
• Read (READ)
• Read with precharge (READA)
• Write (WRIT)
• Write with precharge (WRITA)
• Write mode register (MRS)
The byte to be accessed is specified by DQMLU and DQMLL. Reading or writing is performed
for a byte whose corresponding DQMxx is low. For details on the relationship between DQMxx
and the byte to be accessed, refer to section 7.5.1, Endian/Access Size and Data Alignment.
Figures 7.11 shows an example of the connection of the SDRAM with the LSI.
Rev. 4.00 Sep. 13, 2007 Page 155 of 502
REJ09B0239-0400