HYB18T512160AF INFINEON [Infineon Technologies AG], HYB18T512160AF Datasheet - Page 22

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HYB18T512160AF

Manufacturer Part Number
HYB18T512160AF
Description
512-Mbit DDR2 SDRAM
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HYB18T512160AF
Manufacturer:
Infineon
Quantity:
885
Part Number:
HYB18T512160AF-15
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Figure 3
Note:
1. UDQS/UDQS is data strobe for DQ[15:8],
2. LDM is the data mask signal for DQ[7:0], UDM is the
Data Sheet
LDQS/LDQS is data strobe for DQ[7:0]
data mask signal for DQ[15:8]
Pin Configuration for 16 components, P-TFBGA-84 (top view)
22
3.
V
They are isolated on the device from
and
DDL
HYB18T512[40/80/16]0AF–[3/3S/3.7/5]
V
and
SSQ
.
V
Pin Configuration and Block Diagrams
DDSL
are power and ground for the DLL.
512-Mbit DDR2 SDRAM
09112003-SDM9-IQ3P
Rev. 1.3, 2005-01
V
DD
,
V
DDQ
,
V
SS

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