LM3S2965-IQN25-A0T ETC2 [List of Unclassifed Manufacturers], LM3S2965-IQN25-A0T Datasheet - Page 137
LM3S2965-IQN25-A0T
Manufacturer Part Number
LM3S2965-IQN25-A0T
Description
Microcontroller
Manufacturer
ETC2 [List of Unclassifed Manufacturers]
Datasheet
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8
8.1
8.2
8.2.1
June 04, 2007
Internal Memory
The LM3S2965 microcontroller comes with 64 KB of bit-banded SRAM and 256 KB of flash memory.
The flash controller provides a user-friendly interface, making flash programming a simple task.
Flash protection can be applied to the flash memory on a 2-KB block basis.
Block Diagram
Figure 8-1. Flash Block Diagram
Functional Description
This section describes the functionality of both the flash and SRAM memories.
SRAM Memory
The internal SRAM of the Stellaris
map. To reduce the number of time consuming read-modify-write (RMW) operations, ARM has
introduced bit-banding technology in the Cortex-M3 processor. With a bit-band-enabled processor,
certain regions in the memory map (SRAM and peripheral space) can use address aliases to access
individual bits in a single, atomic operation.
The bit-band alias is calculated by using the formula:
SRAM Array
Cortex-M3
Bridge
System Bus
DCode
ICode
APB
Flash Protection
®
devices is located at address 0x2000.0000 of the device memory
FMPREn
FMPPEn
Preliminary
Flash Control
Flash Timing
USECRL
FCMISC
FCRIS
FCIM
FMD
FMC
FMA
User Registers
USER_REG0
USER_REG1
USER_DBG
LM3S2965 Microcontroller
Flash Array
137
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