TE28F008xxx Intel Corporation, TE28F008xxx Datasheet - Page 12

• Manufacturer Part Number: TE28F008xxx
• Description: (TE28F Series) 3 Volt Advanced Boot Block Flash Memory
• Manufacturer: Intel Corporation

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
6
A
DQ
DQ
DQ
CE#
OE#
WE#
RP#
WP#
V
V
V
GND
NC
Symbol
0
CCQ
CC
PP
–A
0
8
15
Table 2.
–DQ
–
21
7
OUTPUT
OUTPUT
INPUT/
INPUT/
INPUT
INPUT
INPUT
INPUT
INPUT
INPUT
INPUT
Type
3 Volt Advanced Boot Block Pin Descriptions
ADDRESS INPUTS for memory addresses. Addresses are internally latched during a program or
erase cycle.
28F004B3: A[0-18], 28F008B3: A[0-19], 28F016B3: A[0-20],
28F400B3: A[0-17], 28F800B3: A[0-18], 28F160B3: A[0-19],
28F320B3: A[0-20], 28F640B3: A[0-21]
DATA INPUTS/OUTPUTS: Inputs array data on the second CE# and WE# cycle during a Program
command. Inputs commands to the Command User Interface when CE# and WE# are active. Data is
internally latched. Outputs array, identifier and status register data. The data pins float to tri-state when
the chip is de-selected or the outputs are disabled.
DATA INPUTS/OUTPUTS: Inputs array data on the second CE# and WE# cycle during a Program
command. Data is internally latched. Outputs array and identifier data. The data pins float to tri-state
when the chip is de-selected. Not included on x8 products.
CHIP ENABLE: Activates the internal control logic, input buffers, decoders and sense amplifiers. CE#
is active low. CE# high de-selects the memory device and reduces power consumption to standby
levels.
OUTPUT ENABLE: Enables the device’s outputs through the data buffers during a read operation.
OE# is active low.
WRITE ENABLE: Controls writes to the Command Register and memory array. WE# is active low.
Addresses and data are latched on the rising edge of the second WE# pulse.
RESET/DEEP POWER-DOWN: Uses two voltage levels (V
mode.
When RP# is at logic low, the device is in reset/deep power-down mode, which drives the outputs
to High-Z, resets the Write State Machine, and minimizes current levels (I
When RP# is at logic high, the device is in standard operation. When RP# transitions from logic-
low to logic-high, the device defaults to the read array mode.
WRITE PROTECT: Provides a method for locking and unlocking the two lockable parameter blocks.
When WP# is at logic low, the lockable blocks are locked, preventing program and erase
operations to those blocks. If a program or erase operation is attempted on a locked block, SR.1 and
either SR.4 [program] or SR.5 [erase] will be set to indicate the operation failed.
When WP# is at logic high, the lockable blocks are unlocked and can be programmed or erased.
See
OUTPUT V
V
operation (see
This input may be tied directly to V
DEVICE POWER SUPPLY: 2.7 V–3.6 V
PROGRAM/ERASE POWER SUPPLY: Supplies power for program and erase operations. V
be the same as V
manufacturing, 11.4 V–12.6 V may be supplied to V
11.4 V–12.6 V to V
cycles on the parameter blocks. V
Section 3.4
V
commands.
GROUND: For all internal circuitry. All ground inputs must be connected.
NO CONNECT: Pin may be driven or left floating.
CC
PP
Section 3.3
< V
is regulated to 2.7 V–2.85 V, V
PPLK
CC
for details).
protects memory contents against inadvertent or unintended program and erase
: Enables all outputs to be driven to 1.8 V – 2.5 V while the V
Section 4.4
for details on write protection.
CC
PP
(2.7 V–3.6 V) for single supply voltage operation. For fast programming at
can only be done for a maximum of 1000 cycles on the main blocks and 2500
) .
PP
CC
CCQ
may be connected to 12 V for a total of 80 hours maximum (see
(2.7 V–3.6 V).
can be driven at 1.65 V–2.5 V to achieve lowest power
Name and Function
PP
. This pin cannot be left floating. Applying
IL
, V
IH
) to control reset/deep power-down
CCD
CC
).
is at 2.7 V–3.3 V. If the
3UHOLPLQDU\
PP
may