TE28F008xxx Intel Corporation, TE28F008xxx Datasheet - Page 7

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TE28F008xxx

Manufacturer Part Number
TE28F008xxx
Description
(TE28F Series) 3 Volt Advanced Boot Block Flash Memory
Manufacturer
Intel Corporation
Datasheet
1.0
3UHOLPLQDU\
V
V
V
Bus Width
Speed
Memory Arrangement
Blocking (top or bottom)
Locking
Operating Temperature
Program/Erase Cycling
Packages
CC
CCQ
PP
Table 1. 3 Volt Advanced Boot Block Feature Summary
Program/Erase Voltage
Read Voltage
I/O Voltage
Feature
Introduction
This datasheet contains the specifications for the 3 Volt Advanced Boot Block flash memory
family, which is optimized for low power, portable systems. This family of products features
1.65 V–2.5 V or 2.7 V–3.6 V I/Os and a low V
program, and erase operations. In addition this family is capable of fast programming at 12 V.
Throughout this document, the term “2.7 V” refers to the full voltage range 2.7 V–3.6 V (except
where noted otherwise) and “V
overview of the flash memory family including applications, pinouts and pin descriptions. Section
3.0 describes the memory organization and operation for these products. Sections 4.0 and 5.0
contain the operating specifications. Finally, Sections 6.0 and 7.0 provide ordering and other
reference information.
The 3 Volt Advanced Boot Block flash memory features:
NOTES:
1. 32-Mbit and 64-Mbit densities not available in 40-lead TSOP.
2. 4-Mbit density not available in BGA* CSP.
3. V
4. 4- and 64-Mbit densities not available on 48-Ball VF BGA.
CC
Enhanced blocking for easy segmentation of code and data or additional design flexibility
Program Suspend to Read command
V
V
Maximum program and erase time specification for improved data storage.
CCQ
CCQ
Max is 3.3 V on 0.25 m 32-Mbit devices.
input of 1.65 V–2.5 V on all I/Os. See Figures 1 through 4 for pinout diagrams and
location
28F004B3
2048 Kbit x 8 (16 Mbit)
48-Ball
1024 Kbit x 8 (8 Mbit),
One hundred twenty-seven 64-Kbyte main blocks (64 Mbit)
512 Kbit x 8 (4 Mbit)
40-lead TSOP
28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
28F016B3
Sixty-three 64-Kbyte main blocks (32 Mbit)
Thirty-one 64-Kbyte main blocks (16 Mbit)
(2)
8 bit
BGA* CSP
, 28F008B3,
WP# locks/unlocks parameter blocks
Eight 8-Kbyte parameter blocks and
All other blocks protected using V
70 ns, 80 ns, 90 ns, 100 ns, 110 ns
Fifteen 64-Kbyte blocks (8 Mbit) or
Seven 64-Kbyte blocks (4 Mbit) or
2.7 V– 3.6 V or 11.4 V– 12.6 V
1.65 V–2.5 V or 2.7 V– 3.6 V
PP
Extended: –40 C to +85 C
(1)
= 12 V” refers to 12 V ±5%. Section 1.0 and 2.0 provide an
,
(2)
100,000 cycles
2.7 V– 3.6 V
CC
28F400B3
28F160B3, 28F320B3
1024 Kbit x 16 (16 Mbit),
2048 Kbit x 16 (32 Mbit),
4096 Kbit x 16 (64 Mbit)
/V
48-Ball
256 Kbit x 16 (4 Mbit),
512 Kbit x 16 (8 Mbit),
PP
48-Ball VF BGA
48-Lead TSOP,
operating range of 2.7 V–3.6 V for read,
28F640B3
PP
16 bit
(2)
BGA CSP
, 28F800B3,
(4)
(2)
(3)
,
,
Section
Section 4.4
Section 4.2, 4.4
Section 4.2, 4.4
Table 3
Section 4.5
Section 2.2
Section 2.2
Appendix C
Section 3.3
Table 8
Section 4.2, 4.4
Section 4.2, 4.4
Figure
Reference
3,
4.2,
Figure 4
1

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