TE28F008xxx Intel Corporation, TE28F008xxx Datasheet - Page 8

• Manufacturer Part Number: TE28F008xxx
• Description: (TE28F Series) 3 Volt Advanced Boot Block Flash Memory
• Manufacturer: Intel Corporation

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
1.1
2
Product Overview
Intel provides the most flexible voltage solution in the flash industry, providing three discrete
voltage supply pins: V
erase operation. All 3 Volt Advanced Boot Block flash memory products provide program/erase
capability at 2.7 V or 12 V (for fast production programming) and read with V
many designs read from the flash memory a large percentage of the time, 2.7 V V
provide substantial power savings.
The 3 Volt Advanced Boot Block flash memory products are available in either x8 or x16 packages
in the following densities: (see
The parameter blocks are located at either the top (denoted by -T suffix) or the bottom (-B suffix)
of the address map in order to accommodate different microprocessor protocols for kernel code
location. The upper two (or lower two) parameter blocks can be locked to provide complete code
security for system initialization code. Locking and unlocking is controlled by WP# (see
3.3, “Block Locking” on page 14
The Command User Interface (CUI) serves as the interface between the microprocessor or
microcontroller and the internal operation of the flash memory. The internal Write State Machine
(WSM) automatically executes the algorithms and timings necessary for program and erase
operations, including verification, thereby un-burdening the microprocessor or microcontroller.
The status register indicates the status of the WSM by signifying block erase or word program
completion and status.
The 3 Volt Advanced Boot Block flash memory is also designed with an Automatic Power Savings
(APS) feature which minimizes system current drain, allowing for very low power designs. This
mode is entered following the completion of a read cycle (approximately 300 ns later).
The RP# pin provides additional protection against unwanted command writes that may occur
during system reset and power-up/down sequences due to invalid system bus conditions (see
Section 3.6, “Power-Up/Down Operation” on page
Section 3.0, “Principles of Operation” on page 7
of operation. Complete current and voltage specifications can be found in
Characteristics” on page
page 23
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4-Mbit (4,194,304-bit) flash memory organized as 256 Kwords of 16 bits each or 512 Kbytes
of 8-bits each
8-Mbit (8,388,608-bit) flash memory organized as 512 Kwords of 16 bits each or 1024 Kbytes
of 8-bits each
16-Mbit (16,777,216-bit) flash memory organized as 1024 Kwords of 16 bits each or
2048 Kbytes of 8-bits each
32-Mbit (33,554,432-bit) flash memory organized as 2048 Kwords of 16 bits each
64-Mbit (67,108,864-bit) flash memory organized as 4096 Kwords of 16 bits each
for read, program and erase performance specifications.
CC
20. Refer to
for read operation, V
Section 6.0, “Ordering Information” on page 34
for details).
Section 4.5, “AC Characteristics —Read Operations” on
CCQ
gives detailed explanation of the different modes
16).
for output swing, and V
Section 4.4, “DC
PP
for program and
CC
for availability.)
CC
at 2.7 V. Since
operation can
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