BSP324_09 INFINEON [Infineon Technologies AG], BSP324_09 Datasheet - Page 2

• Manufacturer Part Number: BSP324_09
• Description: SIPMOS Power-Transistor
• Manufacturer: INFINEON [Infineon Technologies AG]

1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (single layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Electrical Characteristics, at T
Parameter
Static Characteristics
Drain-source breakdown voltage
V
Gate threshold voltage, V
I
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-source on-state resistance
V
Drain-source on-state resistance
V
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - soldering point
(Pin 4)
SMD version, device on PCB:
@ min. footprint
@ 6 cm
D
GS
DS
DS
GS
GS
GS
=94µA
=0, I
=400V, V
=400V, V
=20V, V
=4.5V, I
=10V, I
2
D
cooling area
=250µA
D
DS
D
=0.17A
GS
GS
=0.05A
=0
=0, T
=0, T
j
j
1)
=25°C
=125°C
GS
= V
DS
j
= 25 °C, unless otherwise specified
Page 2
Rev. 2.1
Symbol
V
V
I
I
R
R
Symbol
R
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
DS(on)
thJS
thJA
min.
min.
400
1.3
-
-
-
-
-
-
-
-
Values
Values
0.01
14.3
13.6
typ.
typ.
1.9
10
16
85
45
-
-
max.
max.
115
100
2.3
0.1
70
10
22
25
25
2009-08-18
-
BSP324
Unit
V
µA
nA
Ω
Unit
K/W