BSP324_09 INFINEON [Infineon Technologies AG], BSP324_09 Datasheet - Page 4

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BSP324_09

Manufacturer Part Number
BSP324_09
Description
SIPMOS Power-Transistor
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet
1 Power dissipation
P
3 Safe operating area
I
parameter : D = 0 , T
D
tot
= f ( V
10
10
10
= f (T
10
10
W
1.9
1.6
1.4
1.2
0.8
0.6
0.4
0.2
A
1
0
-1
-2
-3
1
0
10
0
BSP324
BSP324
DS
0
A
)
20
)
40
10
60
1
A
= 25 °C
80
100
10
120
2
DC
t
p = 170.0µs
°C
V
T
V
1 ms
10 ms
A
DS
160
10
Page 4
Rev. 2.1
3
2 Drain current
I
parameter: V
4 Transient thermal impedance
Z
parameter : D = t
D
thJA
= f (T
K/W
10
10
0.18
0.14
0.12
0.08
0.06
0.04
0.02
10
10
10
0.1
A
= f (t
0
-1
-2
2
1
0
10
0
A
BSP324
BSP324
-5
)
p
10
20
)
single pulse
-4
GS
10
40
≥ 10 V
-3
p
/T
10
60
-2
10
80
-1
10
100
0
10
2009-08-18
120
1
10
D = 0.50
BSP324
2
°C
0.20
0.10
0.05
0.02
0.01
T
t
p
A
s
160
10
4

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