BSP324_09 INFINEON [Infineon Technologies AG], BSP324_09 Datasheet - Page 7

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BSP324_09

Manufacturer Part Number
BSP324_09
Description
SIPMOS Power-Transistor
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet
13 Typ. gate charge
V
GS
= f (Q
V
16
12
10
8
6
4
2
0
0
BSP324
0.2 V
0.5 V
0.8 V
I
D
G
= 0.17 A pulsed, T
DS max
DS max
DS max
1
); parameter: V
2
3
4
DS
j
= 25 °C
,
5
nC
Q
G
7
Page 7
Rev. 2.1
14 Drain-source breakdown voltage
V
(BR)DSS
490
470
460
450
440
430
420
410
400
390
380
370
360
V
-60
BSP324
= f (T
-20
j
)
20
60
100
2009-08-18
BSP324
°C
T
j
180

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